Toward a complete description of linewidth roughness

dc.contributor.author	Κωνσταντούδης, Βασίλειος	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Leunissen, Leonardus H. A.	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.date.accessioned	2015-05-19T17:03:05Z
dc.date.available	2015-05-19T17:03:05Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10749
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://proceedings.spiedigitallibrary.org	en
dc.source	http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1322960	en
dc.subject	Correlation function
dc.subject	Συνάρτηση συσχετισμού
dc.subject	Φωτοαντίσταση
dc.subject	Photoresistance
dc.subject	LER
dc.title	Toward a complete description of linewidth roughness	en
heal.type	conferenceItem
heal.secondaryTitle	a comparison of different methods for vertical and spatial LER and LWR analysis and CD variation	en
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1117/12.535153
heal.language	en
heal.access	free
heal.publicationDate	2004-02-22
heal.bibliographicCitation	Constantoudis, V., Patsis, G., Leunissen, L.H.A. and Gogolides, E. (2004) Toward a complete description of linewidth roughness: a comparison of different methods for vertical and spatial LER and LWR analysis and CD variation. In Metrology, Inspection, and Process Control for Microlithography XVIII. 22nd February 2004. Santa Clara	en
heal.abstract	Line edge (or width) roughness (LER or LWR) of photoresists lines consists a serious issue in shrinking the CDs of the gates to dimensions of a few tens of nanometers. In this paper, we address the problem of the reliable LER characterization as well as the association of LWR with the CD variations. The complete LER characterization requires more parameters than the rms value σ since the latter neglects the spatial aspects of LER and does not predict the dependence on the length of the measured line. The further spatial LER descriptors may be the correlation length ξ and the roughness exponent α, which can be estimated through various methods. One aim of the present work is to perform a systematic comparative study of these methods using model edges generated by a roughness algorithm, in order to show their advantages and disadvantages for a reliable and accurate determination of the spatial LER parameters. In particular, we compare the results from (1) the study of the height-height correlation function (HHCF), (2) the Fourier (or power spectrum, PS) analysis and (3) the variation of rms value σ with measured line edge L [σ(L) curve]. It is found that the HHCF can be considered approximately a rescaled version of σ(L) and that the value of σ becomes almost independent on the measured edge length for lengths larger than ten times the correlation length. As regards the PS, it is shown that the finite length of the edge may affect harmfully the reliable estimation of α and ξ. Finally, we confirm theoretically and generalize an experimental observation regarding the relationship between LWIR and the σ of the CD variations within a die of a wafer. It is shown that they behave in a complimentary way as line length increases so that the sum of their squares remains constant and equal to the square of the LWR σ of the infinite line.	en
heal.publisher	SPIE	en
heal.fullTextAvailability	false
heal.conferenceName	Metrology, Inspection, and Process Control for Microlithography XVIII	en
heal.conferenceItemType	poster