Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Κωνσταντούδης, Βασίλειος	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.date.accessioned	2015-05-19T17:11:40Z
dc.date.available	2015-05-19T17:11:40Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10751
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931704003375	en
dc.subject	Scaling analysis
dc.subject	Ionization
dc.subject	LER
dc.subject	Κλιμακωτή ανάλυση
dc.subject	Φωτοαντίσταση
dc.subject	Ιονισμός
dc.title	Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1016/j.mee.2004.06.005
heal.language	en
heal.access	campus
heal.publicationDate	2004-09
heal.bibliographicCitation	Patsis, G., Constantoudis, V. and Gogolides, E. (2004) Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations. "Microelectronic Engineering", 75 (3), p.297–308	en
heal.abstract	A fast 2D/3D resist dissolution algorithm based on the critical ionization model is used to quantify line-edge roughness and determine its relation to resist polymer molecular weight, the end-to-end distance and the radius of gyration, keeping acid effects off (i.e., minimal). The algorithm permits also simulations of line-edge roughness metrology by examining the effects of SEM measurement box length.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false