Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography

dc.contributor.author	Eder-Kapl, Stefan	en
dc.contributor.author	Loeschner, Hans	en
dc.contributor.author	Zeininger, Michalea	en
dc.contributor.author	Fallmann, Wolfgang	en
dc.contributor.author	Kirch, Oliver	en
dc.date.accessioned	2015-05-20T00:22:45Z
dc.date.available	2015-05-20T00:22:45Z
dc.date.issued	2015-05-20
dc.identifier.uri	http://hdl.handle.net/11400/10768
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931704001078	en
dc.subject	Analysis of variance
dc.subject	LER
dc.subject	Ανάλυση διακύμανσης
dc.subject	Ion beam
dc.subject	Δέσμη ιόντων
dc.subject	Ήλιο
dc.subject	Microelectronics
dc.subject	ΜΙκροηλεκτρονική
dc.title	Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Πάτσης, Γεώργιος	el
heal.contributorName	Κωνσταντούδης, Βασίλειος	el
heal.contributorName	Γογγολίδης, Ευάγγελος	el
heal.identifier.secondary	DOI: 10.1016/j.mee.2004.02.049
heal.language	en
heal.access	campus
heal.publicationDate	2004-06
heal.bibliographicCitation	Eder-Kapl, S., Loeschner, H., Zeininger, M., Fallmann, W., Kirch, O. et al. (2004) Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography. "Microelectronic Engineering", 73-74, p.252–258	en
heal.abstract	We conducted line edge roughness (LER) measurements on resists with various sensitivities, exposed with a 75 keV 1:1 masked ion beam lithography tool. The critical dimension measurement data were treated with an algorithm for separation of mask induced roughness from random LER. The scaling analysis approach provided the correlation length and the roughness exponent. The results indicate that for exposure doses >2.5 μC/cm2 LER is not governed by shot noise but by the resist material properties (sensitivity, molecular weight, acid diffusion length) and development conditions.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false