Roughness analysis of lithographically produced nanostructures

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Κωνσταντούδης, Βασίλειος	el
dc.contributor.author	Τσερέπη, Αγγελική	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.contributor.author	Grozev, Grozdan	en
dc.date.accessioned	2015-05-20T00:30:51Z
dc.date.available	2015-05-20T00:30:51Z
dc.date.issued	2015-05-20
dc.identifier.uri	http://hdl.handle.net/11400/10769
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931703000856	en
dc.subject	LER
dc.subject	Nanotechnology
dc.subject	Microelectronics
dc.subject	Photoresistance
dc.subject	Νανοτεχνολογία
dc.subject	Μικροηλεκτρονική
dc.subject	Φωτοαντίσταση
dc.title	Roughness analysis of lithographically produced nanostructures	en
heal.type	journalArticle
heal.secondaryTitle	off-line measurement and scaling analysis	en
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Thomas, Hoffmann	en
heal.identifier.secondary	DOI: 10.1016/S0167-9317(03)00085-6
heal.language	en
heal.access	campus
heal.publicationDate	2003-06
heal.bibliographicCitation	Patsis, G., Constantoudis, V., Tserepi, A., Gogolides, E., Grozev, G. et al. (2003) Roughness analysis of lithographically produced nanostructures: off-line measurement and scaling analysis. "Microelectronic Engineering", 67-68, p.319–325	en
heal.abstract	The aim of this paper is to obtain a method for line-edge roughness (LER) detection and characterization for lithographically produced nanostructures based on the analysis of top-down scanning electron microscope (SEM) images. For the line-edge detection, an off-line image analysis algorithm is developed, while for the LER characterization the detected edges are analyzed according to the scaling theory to reveal the type of edge roughness (such as self-affinity or quasiperiodicity). As a consequence one determines the best and most complete set of roughness descriptors. The experimental line-edges of two photoresists are examined and show a self-affine structure, similar to the lithographically produced surfaces of negative and positive tone photoresists [Microelectron. Eng., 61/62 (2002) 793]. Therefore, the best LER descriptors for them should be the σ value (root mean square value of the edge points), the correlation length ξ and the roughness exponent α which is connected to the fractal dimension DF (α=2−DF). Finally, the dependencies of these descriptors on image analysis parameters are also investigated.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false