dc.contributor.author | Πάτσης, Γεώργιος | el |
dc.contributor.author | Κωνσταντούδης, Βασίλειος | el |
dc.contributor.author | Τσερέπη, Αγγελική | el |
dc.contributor.author | Γογγολίδης, Ευάγγελος | el |
dc.date.accessioned | 2015-05-20T15:17:58Z | |
dc.date.available | 2015-05-20T15:17:58Z | |
dc.date.issued | 2015-05-20 | |
dc.identifier.uri | http://hdl.handle.net/11400/10773 | |
dc.rights | Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.source | http://scitation.aip.org | en |
dc.source | http://scitation.aip.org/content/avs/journal/jvstb/21/3/10.1116/1.1570845 | en |
dc.subject | Image analysis | |
dc.subject | Photoresistors | |
dc.subject | LER | |
dc.subject | Ανάλυση εικόνας | |
dc.subject | Φωτοαντιστάσεις | |
dc.title | Quantification of line-edge roughness of photoresists | en |
heal.type | journalArticle | |
heal.secondaryTitle | i. a comparison between off-line and on-line analysis of top-down scanning electron microscopy images | en |
heal.classification | Technology | |
heal.classification | Electronics | |
heal.classification | Τεχνολογία | |
heal.classification | Ηλεκτρονική | |
heal.classificationURI | http://id.loc.gov/authorities/subjects/sh85133147 | |
heal.classificationURI | http://id.loc.gov/authorities/subjects/sh85042383 | |
heal.classificationURI | **N/A**-Τεχνολογία | |
heal.classificationURI | **N/A**-Ηλεκτρονική | |
heal.identifier.secondary | DOI: 10.1116/1.1570845 | |
heal.language | en | |
heal.access | campus | |
heal.publicationDate | 2003-04-25 | |
heal.bibliographicCitation | Patsis, G., Constantoudis, V., Tserepi, A. and Gogolides, E. (2003) Quantification of line-edge roughness of photoresists. I. A comparison between off-line and on-line analysis of top-down scanning electron microscopy images. "Journal of Vacuum Science & Technology B", 21 (3) | en |
heal.abstract | An off-line image analysis algorithm and software is developed for the calculation of line-edge roughness (LER) of resist lines, and is successfully compared with the on-line LER measurements. The effect of several image-processing parameters affecting the fidelity of the off-line LER measurement is examined. The parameters studied include the scanning electron microscopy magnification, the image pixel size dimension, the Gaussian noise-smoothing filter parameters, and the line-edge determination algorithm. The issues of adequate statistics and appropriate sampling frequency are also investigated. The advantages of off-line LER quantification and recommendations for the on-line measurement are discussed. Having introduced a robust algorithm for edge-detection in Paper I, Paper II [V. Constantoudis et al., J. Vac. Sci. Technol. B 21, 1019 (2003)] of this series introduces the appropriate parameters to fully quantify LER. | en |
heal.publisher | American Vacuum Society | en |
heal.journalName | Journal of Vacuum Science & Technology B | en |
heal.journalType | peer-reviewed | |
heal.fullTextAvailability | false |
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