Epoxidized novolac resist (EPR) for high-resolution negative- and positive-tone electron beam lithography

dc.contributor.author	Τέγκου, Ευαγγελία	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.contributor.author	Αργείτης, Παναγιώτης	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.date.accessioned	2015-05-20T17:16:49Z
dc.date.issued	2015-05-20
dc.identifier.uri	http://hdl.handle.net/11400/10787
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://proceedings.spiedigitallibrary.org	en
dc.source	http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=926966	en
dc.subject	Diffusion
dc.subject	Δέσμες ηλεκτρονίων
dc.subject	Λιθογραφία
dc.subject	Διάχυση
dc.subject	Applied physics
dc.subject	Εφαρμοσμένη φυσική
dc.title	Epoxidized novolac resist (EPR) for high-resolution negative- and positive-tone electron beam lithography	en
heal.type	conferenceItem
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Γλέζος, Νίκος	el
heal.contributorName	Tan, Zoilo C. H.	en
heal.contributorName	Lee, Kim Y.	en
heal.contributorName	Le, Phuong T.	en
heal.contributorName	Hsu, Yautzong	en
heal.contributorName	Χατζάκης, Μιχαήλ	el
heal.identifier.secondary	DOI: 10.1117/12.388283
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2000-02-27
heal.bibliographicCitation	Tegou, E., Gogolides, E., Argitis, P., Raptis, I., Patsis, G. et al. (2000) Epoxidized novolac resist (EPR) for high-resolution negative- and positive-tone electron beam lithography. In Advances in Resist Technology and Processing XVII. 27th February 2000. Santa Clara	en
heal.abstract	An epoxidized novolac resist (EPR) has been evaluated for high resolution negative and positive tone electron beam lithography. EPR is a chemically amplified experimental resist developed in 'Demokritos' for e-beam lithography. It is characterized by high resolution, high sensitivity and very good post-exposure bake (PEB) latitude. Wet development after the post exposure bake (PEB) step gives a negative tone process while silylation and dry development gives a positive tone process. In this work, EPR's high resolution capabilities (below 0.25 micrometer) are demonstrated for both processes. Critical process parameters such as the photo acid generator (PAG) content of the resist, the PEB temperature and the effect of the delay time between exposure and PEB are examined. Delay effects are studied both for directly e-beam written resist profiles as well as for silylated profiles. The experimental work is accompanied by detailed modeling of lithographic processes, including acid diffusion, gel formation, silylation and delay effects.	en
heal.publisher	SPIE	en
heal.fullTextAvailability	false
heal.conferenceName	Advances in Resist Technology and Processing XVII	en
heal.conferenceItemType	poster