Simulation of chemically amplified resist processes for 150 nm e-beam lithography

dc.contributor.author	Rosenbusch, Anja	en
dc.contributor.author	Cui, Zheng	en
dc.contributor.author	Di Fabrizio, Enzo	en
dc.contributor.author	Gentili, Monica	en
dc.contributor.author	Γλέζος, Νίκος	el
dc.date.accessioned	2015-05-20T17:31:18Z
dc.date.available	2015-05-20T17:31:18Z
dc.date.issued	2015-05-20
dc.identifier.uri	http://hdl.handle.net/11400/10788
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931799001112	en
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Δέσμες ηλεκτρονίων
dc.subject	Μικροηλεκτρονική
dc.subject	Applied physics
dc.subject	Electron beams
dc.subject	Microelectronics
dc.title	Simulation of chemically amplified resist processes for 150 nm e-beam lithography	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Meneghini, Giancarlo	en
heal.contributorName	Nowotny, B.	en
heal.contributorName	Πάτσης, Γεώργιος	el
heal.contributorName	Prewett, P.	en
heal.contributorName	Ράπτης, Ιωάννης	el
heal.identifier.secondary	DOI: 10.1016/S0167-9317(99)00111-2
heal.language	en
heal.access	campus
heal.publicationDate	1999-05
heal.bibliographicCitation	Rosenbusch, A., Cui, Z., Di Fabrizio, E., Gentili, M., Glezos, N. et al. (1999) Simulation of chemically amplified resist processes for 150 nm e-beam lithography. "Microelectronic Engineering", 46 (1-4), p.379–382	en
heal.abstract	A fast simulator for e-beam lithography called SELID, is presented. For the exposure part, an analytical solution based on the Boltzmann transport equation is used instead of Monte Carlo. All-important phenomena (backscattering, generation of secondary electrons) are included in the calculation. The reaction/diffusion effects occurring during post exposure bake in the case of chemically amplified resists (CARs) are taken into account. The results obtained by the simulation are compared successfully with experimental ones for conventional and CARs. The case of substrates consisting of more than one layer is considered in depth as being of great importance in e-beam pattering. By using SELID, forecast of resist profile with considerable accuracy for a wide range of resists, substrates and energies is possible as long as the evaluation of proximity effect parameters.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false