Molecular dynamics simulation of gel formation and acid diffusion in negative tone chemically amplified resists

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Γλέζος, Νίκος	el
dc.date.accessioned	2015-05-20T17:37:39Z
dc.date.available	2015-05-20T17:37:39Z
dc.date.issued	2015-05-20
dc.identifier.uri	http://hdl.handle.net/11400/10789
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931799001045	en
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Acid diffusion
dc.subject	Μικροηλεκτρονική
dc.subject	Applied physics
dc.subject	Microelectronics
dc.subject	Διάχυση οξέων
dc.title	Molecular dynamics simulation of gel formation and acid diffusion in negative tone chemically amplified resists	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1016/S0167-9317(99)00104-5
heal.language	en
heal.access	campus
heal.publicationDate	1999-05
heal.bibliographicCitation	Patsis, G. and Glezos, N. (1999) Molecular dynamics simulation of gel formation and acid diffusion in negative tone chemically amplified resists. "Microelectronic Engineering", 46 (1-4), p.359–363	en
heal.abstract	The knowledge of the structural changes that occur during the lithographic process using chemically amplified resists (CARs) is of great importance in process and resist optimization. Molecular dynamics (MD) is a suitable method for the simulation of these microscopic changes. A detailed description of the lithographic procedure including reaction propagation, acid diffusion, cage effects, free volume effects and developer selectivity can be included in such a model. The comparison of contrast curve data and acid diffusion measurements with MD modeling, leading to the evaluation of microscopic parameters are presented in this paper.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false