E-beam proximity correction for negative tone chemically amplified resists taking into account post-bake effects

dc.contributor.author	Γλέζος, Νίκος	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Rosenbusch, Anja	en
dc.contributor.author	Cui, Zheng	en
dc.date.accessioned	2015-05-20T17:56:42Z
dc.date.available	2015-05-20T17:56:42Z
dc.date.issued	2015-05-20
dc.identifier.uri	http://hdl.handle.net/11400/10791
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931798000732	en
dc.subject	Diffusion
dc.subject	Microelectronics
dc.subject	Applied physics
dc.subject	Lithography
dc.subject	Διάχυση
dc.subject	Μικροηλεκτρονική
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Λιθογραφία
dc.title	E-beam proximity correction for negative tone chemically amplified resists taking into account post-bake effects	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1016/S0167-9317(98)00073-2
heal.language	en
heal.access	campus
heal.publicationDate	1998-03
heal.bibliographicCitation	Glezos, N., Patsis, G., Rosenbusch, A. and Cui, Z. (1998) E-beam proximity correction for negative tone chemically amplified resists taking into account post-bake effects. "Microelectronic Engineering", 41-42, p.319–322	en
heal.abstract	The use of chemically amplified resists (CARs) in electron beam lithography required an additional processing lithography step i.e. post exposure bake (PEB). During this step the acid produced during exposure diffuses and chain reactions occur. In this paper, the method of single pixel exposures is used in order to evaluate the diffusion coefficient. This approach is applied in the case of three resists, namely AZPN114 (Hoechst), SAL601 (Shipley) and the experimental EPR. In the case of AZPN114 diffusion is limited for the higher Θ values in the center of the pattern but is considerably larger at the edge. EPR represents an extreme case where diffusion is limited by a strong cage effect due to a fast completion of the reaction while SAL601 represents an intermediate case. The diffusion coefficient is used in combination with the e-beam simulator SELID to provide data for proximity correction. The reaction-diffusion system for the specific values of the thermal processing parameters is used to modify the point spread function I. The resulting actual acid concentration for a point exposure is convoluted for a given layout. Subsequently, proximity correction is performed as in the case of conventional resists.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false