Gel formation theory approach for the modelling of negative chemically amplified e-beam resists

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.contributor.author	Γλέζος, Νίκος	el
dc.contributor.author	Αργείτης, Παναγιώτης	el
dc.contributor.author	Χατζάκης, Μιχαήλ	el
dc.date.accessioned	2015-05-20T18:24:45Z
dc.date.available	2015-05-20T18:24:45Z
dc.date.issued	2015-05-20
dc.identifier.uri	http://hdl.handle.net/11400/10796
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931796001785	en
dc.subject	Acid diffusion
dc.subject	Gels
dc.subject	Lithography
dc.subject	Applied physics
dc.subject	Διάχυση οξέων
dc.subject	Τζελ
dc.subject	Λιθογραφία
dc.subject	Εφαρμοσμένη φυσική
dc.title	Gel formation theory approach for the modelling of negative chemically amplified e-beam resists	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Gentili, Monica	en
heal.contributorName	Αϊδίνης, Κωνσταντίνος	el
heal.contributorName	Maggiora, R.	en
heal.identifier.secondary	DOI: 10.1016/S0167-9317(96)00178-5
heal.language	en
heal.access	campus
heal.publicationDate	1997-02
heal.bibliographicCitation	Patsis, G., Raptis, I., Glezos, N., Argitis, P., Hatzakis, M. et al. (1997) Gel formation theory approach for the modelling of negative chemically amplified e-beam resists. "Microelectronic Engineering", 35 (1-4), p.157–160	en
heal.abstract	Gel formation theory is applied for the interpretation of experimental lithographic results of epoxy based negative e-beam resists. The success of different theoretical models in fitting experiments depends upon the value of concentration of the photoacid generator (PAG) and the thermal processing conditions. The chemical composition of each specific system, the sensitivity and the range of acid diffusion are important parameters in the analysis. It is concluded that existing theories with an appropriate interpretation explain satisfactorily experimental results in a given range of resist composition and processing parameters. However in some cases a model which would include more explicitly the reaction-diffusion mechanism is required.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false