Application of a reaction‐diffusion model for negative chemically amplified resists to determine electron‐beam proximity correction parameters

dc.contributor.author	Γλέζος, Νίκος	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.contributor.author	Αργείτης, Παναγιώτης	el
dc.contributor.author	Gentili, Monica	el
dc.date.accessioned	2015-05-20T18:31:31Z
dc.date.available	2015-05-20T18:31:31Z
dc.date.issued	2015-05-20
dc.identifier.uri	http://hdl.handle.net/11400/10797
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://scitation.aip.org	en
dc.source	http://scitation.aip.org/content/avs/journal/jvstb/14/6/10.1116/1.588585	en
dc.subject	Diffusion
dc.subject	Negative resistance
dc.subject	Acids
dc.subject	Applied physics
dc.subject	Διάχυση
dc.subject	Αρνητική αντίσταση
dc.subject	Οξέα
dc.subject	Εφαρμοσμένη φυσική
dc.title	Application of a reaction‐diffusion model for negative chemically amplified resists to determine electron‐beam proximity correction parameters	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Grella, L.	en
heal.identifier.secondary	DOI: 10.1116/1.588585
heal.language	en
heal.access	campus
heal.publicationDate	1996-08-12
heal.bibliographicCitation	Glezos, N., Patsis, G., Raptis, I., Argitis, P., Gentili, M. et al. (1996) Application of a reaction‐diffusion model for negative chemically amplified resists to determine electron‐beam proximity correction parameters. "Journal of Vacuum Science & Technology B", 14 (6)	en
heal.abstract	The method of single pixel exposures is applied for the determination of aciddiffusion effects in negative chemically amplified resists. The wide range of crosslink density values contained in a single dot is used to determine nonlinear diffusion parameters. A reaction‐diffusion model is developed where the diffusion coefficient D is a function of the crosslink density Θ. This function D(Θ) is evaluated for a given range of postexposure bake parameters in each case and the information obtained is used for proximity correction, also using the e‐beam lithography simulation tool LITHOS. In order to test the model under different circumstances, two resists are studied, namely, the commercially available SAL‐601 and the experimental epoxy novolac resistEPR. The diffusion coefficient is evaluated for each resist under the best processing conditions. The proximity correction procedure is fully demonstrated in the case of SAL‐601.	en
heal.publisher	American Vacuum Society	en
heal.journalName	Journal of Vacuum Science & Technology B	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true