Porous silicon membranes over cavity for efficient local thermal isolation in Si thermal sensors

dc.contributor.author	Παγώνης, Δημήτριος-Νικόλαος	el
dc.contributor.author	Νασσιοπούλου, Ανδρούλα Γ.	el
dc.contributor.author	Καλτσάς, Γρηγόριος	el
dc.date.accessioned	2015-06-02T11:16:43Z
dc.date.issued	2015-06-02
dc.identifier.uri	http://hdl.handle.net/11400/14799
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.electrochem.org/	en
dc.subject	Thermal isolation
dc.subject	Electrical isolation
dc.subject	Electrochemistry
dc.subject	Θερμική μόνωση
dc.subject	Ηλεκτρική μόνωση
dc.subject	Ηλεκτροχημεία
dc.title	Porous silicon membranes over cavity for efficient local thermal isolation in Si thermal sensors	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.identifier.secondary	DOI: 10.1149/1.1764571
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2004
heal.bibliographicCitation	PAGONIS, D.-N., NASSIOPOULOU, A.G. & KALTSAS, G. (2004). Porous silicon membranes over cavity for efficient local thermal isolation in Si thermal sensors. Journal of the Electrochemical Society. [online] 151 (8). p. H174-H179. Available from: http://www.electrochem.org/[Accessed 17/06/2004]	en
heal.abstract	An improvement of porous silicon technology for local thermal isolation on bulk crystalline silicon is presented. The technique consists of forming an air cavity below the porous layer to increase the thermal isolation efficiency. Both porous silicon and the cavity underneath are formed during the same electrochemical process in two steps: in step 1 the current density used is below a critical value, and in step 2 it is switched to a value above the critical current for electropolishing. In this way, porous silicon is formed first, followed by the formation of the cavity underneath. Experimental results and simulations are shown together with an application of this process in a thermal silicon flow sensor.	en
heal.publisher	Electrochemical Society	en
heal.journalName	Journal of the Electrochemical Society	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false