Implantation masking technology for selective porous silicon formation

dc.contributor.author	Παγώνης, Δημήτριος-Νικόλαος	el
dc.contributor.author	Καλτσάς, Γρηγόριος	el
dc.contributor.author	Νασιοπούλου, Ανδρούλα Γ.	el
dc.date.accessioned	2015-06-02T12:52:26Z
dc.date.available	2015-06-02T12:52:26Z
dc.date.issued	2015-06-02
dc.identifier.uri	http://hdl.handle.net/11400/14819
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.wiley-vch.de/	en
dc.subject	Ion implantation
dc.subject	Nanostructured materials
dc.subject	Surface concentration
dc.subject	Εμφύτευση ιόντων
dc.subject	Νανοδομημένα υλικά
dc.subject	Επιφανειακή συγκέντρωση
dc.title	Implantation masking technology for selective porous silicon formation	en
heal.type	journalArticle
heal.generalDescription	3rd International Conference Porous Semiconductors - Science and Technology. Puerto de la Cruz, Spain. 10-15 March, 2002. Code 61086	en
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85067801
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh93000864
heal.identifier.secondary	DOI: 10.1002/pssa.200306508
heal.language	en
heal.access	campus
heal.publicationDate	2003-05
heal.bibliographicCitation	PAGONIS, D.-N., KALTSAS, G. & NASSIOPOULOU, A.G. (2003). Implantation masking technology for selective porous silicon formation. Physica Status Solidi (A). [online] 197 (1). p. 241-245. Available from: http://www.wiley-vch.de/	en
heal.abstract	In this work, the masking technology for selective porous silicon formation by creating n-type areas on a p-type substrate by ion implantation was investigated and the optimum conditions were found. The most critical parameter in the process is the surface concentration of dopants. However, in all cases, some corrosion of the masking area was observed. The main efficiency-limiting factor of the technique is pointed out and a solution is proposed. The optimum conditions developed were used to fabricate suspended monocrystalline silicon membranes on bulk silicon.	en
heal.publisher	Wiley-VCH Verlag	en
heal.journalName	Physica Status Solidi (A)	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true