Micro-raman analysis of polysilicon membranes deposited on porous silicon channels

dc.contributor.author	Talaat, Hassan A.	en
dc.contributor.author	Negm, Sohair S.	en
dc.contributor.author	Schaffer, Howard E.	en
dc.contributor.author	Καλτσάς, Γρηγόριος	el
dc.contributor.author	Νασιοπούλου, Ανδρούλα Γ.	el
dc.date.accessioned	2015-06-02T13:48:40Z
dc.date.available	2015-06-02T13:48:40Z
dc.date.issued	2015-06-02
dc.identifier.uri	http://hdl.handle.net/11400/14837
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com/	en
dc.subject	polycrystalline silicon
dc.subject	spectroscopy
dc.subject	sinusoidal dependence
dc.subject	πολυκρυσταλλικό πυρίτιο
dc.subject	φασματοσκοπία
dc.subject	ημιτονοειδή εξάρτηση
dc.title	Micro-raman analysis of polysilicon membranes deposited on porous silicon channels	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.identifier.secondary	ISSN: 00223093
heal.language	en
heal.access	campus
heal.publicationDate	2000-05-01
heal.bibliographicCitation	TALAAT, H.A., NEGM, S.S., SCHAFFER, H.E., KALTSAS, G. & NASSIOPOULOU, A.G. (2000). Micro-raman analysis of polysilicon membranes deposited on porous silicon channels. Journal of Non-Crystalline Solids. [online] 266-269 B. p. 1345-1349. Available from: http://www.elsevier.com/	en
heal.abstract	Local stress distribution is determined in polycrystalline silicon using micro-Raman spectroscopy. The microstructures are thin membranes over a thick porous silicon channel locally grown on bulk silicon. The effect of the width of the membrane on the distribution of the local stress is measured. The results show that annealing reduces the residual stress by an order of magnitude and that the tensile stress in the membrane has a sinusoidal dependence for the relatively narrow channels.	en
heal.publisher	Elsevier	en
heal.journalName	Journal of Non-Crystalline Solids	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true