Novel C-MOS compatible monolithic silicon gas flow sensor with porous silicon thermal isolation

dc.contributor.author	Καλτσάς, Γρηγόριος	el
dc.contributor.author	Νασιοπούλου, Ανδρούλα Γ.	el
dc.date.accessioned	2015-06-02T13:55:11Z
dc.date.available	2015-06-02T13:55:11Z
dc.date.issued	2015-06-02
dc.identifier.uri	http://hdl.handle.net/11400/14839
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com/	en
dc.subject	Integrated gas flow sensor
dc.subject	Porous silicon
dc.subject	Thermal isolation
dc.subject	Ενσωματωμένος αισθητήρας ροής αερίου
dc.subject	Πορώδες πυρίτιο
dc.subject	Θερμική μόνωση
dc.title	Novel C-MOS compatible monolithic silicon gas flow sensor with porous silicon thermal isolation	en
heal.type	journalArticle
heal.generalDescription	Proceedings of the 1998 Eurosensors XII. Southampton, UK. 13-16 September, 1998. Code 56003	en
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh95003725
heal.identifier.secondary	DOI: 10.1016/S0924-4247(98)00370-7
heal.language	en
heal.access	campus
heal.publicationDate	1999-08-30
heal.bibliographicCitation	KALTSAS, G. & NASSIOPOULOU, A.G. (1999). Novel C-MOS compatible monolithic silicon gas flow sensor with porous silicon thermal isolation. Sensors and Actuators, A: Physical. [online] 76(1-3). p. 133-138. Available from: http://www.elsevier.com/[Accessed 10/01/2000]	en
heal.abstract	A novel C-MOS compatible silicon gas flow sensor using porous silicon for thermal isolation has been designed and fabricated. The small sensor size combined with the very good thermal isolation by porous silicon assure fast response, with a time constant of the order of 1.5 ms. The principle of operation is based on heat transfer from a polysilicon resistor to the fluid and the detection of the flow-induced temperature difference by Al/polysilicon thermopiles, integrated at both sides of the heater. The sensor has been evaluated in nitrogen flows from 0 to 0.4 m/s. The sensitivity per heating power is 6.0 mV/(m/s)W and the responsivity is 0.65 V/W. The noise equivalent power and the minimum detectable velocity are 1.5 × 10-8 W/Hz1/2 and 4.1 × 10-3 m/s, respectively. The chip size is 1.1 mm × 1.5 mm.	en
heal.publisher	Elsevier	en
heal.journalName	Sensors and Actuators, A: Physical	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true