Micro-raman characterization of stress distribution within free standing mono- and poly-crystalline silicon membranes

dc.contributor.author	Αναστασάκης, Ευάγγελος Μ.	el
dc.contributor.author	Καλτσάς, Γρηγόριος	el
dc.contributor.author	Νασιοπούλου, Ανδρούλα Γ.	el
dc.contributor.author	Σιακαβέλλας, Μ.	el
dc.date.accessioned	2015-06-02T14:07:08Z
dc.date.available	2015-06-02T14:07:08Z
dc.date.issued	2015-06-02
dc.identifier.uri	http://hdl.handle.net/11400/14843
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com/	en
dc.subject	Crystalline materials
dc.subject	Membranes
dc.subject	Composite micromechanics
dc.subject	Κρυσταλλικά υλικά
dc.subject	Μεμβράνες
dc.subject	Σύνθετη μικρομηχανική
dc.title	Micro-raman characterization of stress distribution within free standing mono- and poly-crystalline silicon membranes	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.identifier.secondary	doi:10.1016/S0167-9317(98)00109-9
heal.language	en
heal.access	campus
heal.publicationDate	1998-03
heal.bibliographicCitation	SIAKAVELLAS, M., ANASTASSAKIS, E.M., KALTSAS, G. & NASSIOPOULOU, A.G. (1998). Micro-raman characterization of stress distribution within free standing mono- and poly-crystalline silicon membranes. Microelectronic Engineering. [online] 41-42. p. 469-472. Available from: http://www.elsevier.com/[Accessed 11/06/1999]	en
heal.abstract	Stress measurements were performed in a free standing monocrystalline cantilever and a polycrystalline silicon membrane suspended over a deep cavity, using micro-Raman spectroscopy. These micromechanical structures were fabricated using porous silicon as a sacrificial layer. The results show that the stress varies across the membrane and the cantilever, the level of stress in the latter being lower than in the membrane.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true