Stress effect on suspended polycrystalline silicon membranes fabricated by micromachining of porous silicon

dc.contributor.author	Καλτσάς, Γρηγόριος	el
dc.contributor.author	Νασιοπούλου, Ανδρούλα Γ.	el
dc.contributor.author	Σιακαβέλλας, Μ.	el
dc.contributor.author	Αναστασάκης, Ευάγγελος Μ.	el
dc.date.accessioned	2015-06-02T14:15:40Z
dc.date.available	2015-06-02T14:15:40Z
dc.date.issued	2015-06-02
dc.identifier.uri	http://hdl.handle.net/11400/14845
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com/	en
dc.subject	Micromachining
dc.subject	Porous silicon
dc.subject	Stress effect
dc.subject	Suspended membranes
dc.subject	Μικρομηχανική
dc.subject	Πορώδες πυρίτιο
dc.subject	Επίδραση της πίεσης
dc.subject	Αιωρούμενες μεμβράνες
dc.title	Stress effect on suspended polycrystalline silicon membranes fabricated by micromachining of porous silicon	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh96011311
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh95003725
heal.identifier.secondary	doi:10.1016/S0924-4247(98)00063-6
heal.language	en
heal.access	campus
heal.publicationDate	1998-06-15
heal.bibliographicCitation	KALTSAS, G., NASSIOPOULOU, A.G., SIAKAVELLAS, M. & ANASTASSAKIS, E.M. (1998). Stress effect on suspended polycrystalline silicon membranes fabricated by micromachining of porous silicon. Sensors and Actuators, A: Physical. [online] 68 (1-3). p. 429-434. Available from: http://www.elsevier.com/[Accessed 03/12/1998]	en
heal.abstract	Large polycrystalline silicon membranes in the form of bridges suspended over deep monocrystalline silicon cavities have been fabricated by using porous silicon as a sacrificial layer. Stresses within the free-standing membranes as well as within supported polycrystalline membranes (pads) are measured through micro-Raman spectroscopy and a different model is used in each case in order to calculate the stresses from the observed Raman shifts. A detailed study of stress distribution along the membranes and pads has been performed, as a function of thickness and annealing treatment. The stress profiles reveal variations in stress along the membranes and pads.	en
heal.publisher	Elsevier	en
heal.journalName	Sensors and Actuators, A: Physical	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true