Frontside bulk silicon micromachining using porous-silicon technology

dc.contributor.author	Καλτσάς, Γρηγόριος	el
dc.contributor.author	Νασιοπούλου, Ανδρούλα Γ.	el
dc.date.accessioned	2015-06-02T14:27:01Z
dc.date.available	2015-06-02T14:27:01Z
dc.date.issued	2015-06-02
dc.identifier.uri	http://hdl.handle.net/11400/14849
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com/	en
dc.subject	Bulk silicon micromachining
dc.subject	Porous-silicon technology
dc.subject	C-MOS
dc.subject	Μαζική Μικρομηχανική πυριτίου
dc.subject	Τεχνολογία πορώδους πυριτίου
dc.title	Frontside bulk silicon micromachining using porous-silicon technology	el
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.identifier.secondary	doi:10.1016/S0924-4247(97)01669-5
heal.language	en
heal.access	campus
heal.publicationDate	1998-03-15
heal.bibliographicCitation	KALTSAS, G. & NASSIOPOULOU, A.G. (1998). Frontside bulk silicon micromachining using porous-silicon technology. Sensors and Actuators, A: Physical. [online] 65 (2-3). p. 175-179. Available from: http://www.elsevier.com/[Accessed 27/07/1998]	en
heal.abstract	Porous-silicon technology is successfully used for frontside bulk silicon micromachining in a process which is fully C-MOS compatible. Porous silicon is used as a sacrificial layer and it is removed by C-MOS-compatible chemicals, leaving a very smooth bottom surface and sidewalls. Deep trenches, bridges with suspended membranes and cantilevers are formed, which open new possibilities in monolithic integration of sensors with electronics. Cavities as deep as ∼ 120 μm and suspended polysilicon membranes with a flat surface as large as 230 μmX 550 μm have been fabricated by this process. Also other micromechanical structures such as very flat polysilicon cantilevers of dimensions 150 μmX2 μmX2 μm are easily obtained after optimization of the process in order to minimize the strain within the polysilicon films.	en
heal.publisher	Elsevier	en
heal.journalName	Sensors and Actuators, A: Physical	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true