Micro-raman study of mechanical stress in polycrystalline silicon bridges

dc.contributor.author	Talaat, Hassan A.	el
dc.contributor.author	Negm, Sohair S.	en
dc.contributor.author	Schaffer, Howard E.	en
dc.contributor.author	Καλτσάς, Γρηγόριος	el
dc.contributor.author	Νασιοπούλου, Ανδρούλα Γ.	el
dc.date.accessioned	2015-06-02T14:42:42Z
dc.date.issued	2015-06-02
dc.identifier.uri	http://hdl.handle.net/11400/14856
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.mrs.org/	en
dc.subject	spectroscopy
dc.subject	φασματοσκοπία
dc.subject	Stress analysis
dc.subject	Annealing
dc.subject	ανάλυση καταπονήσεων
dc.subject	ανόπτηση
dc.title	Micro-raman study of mechanical stress in polycrystalline silicon bridges	en
heal.type	conferenceItem
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.identifier.secondary	DOI: http://dx.doi.org/10.1557/PROC-505-495
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	1998
heal.bibliographicCitation	Talaat, H.A., Negm, S.S., Schaffer, H.E., Kaltsas, G. & Nassiopoulou, A.G. (1998) Micro-raman study of mechanical stress in polycrystalline silicon bridges, In: Proceedings of the 1997 Materials Research Society Fall Meeting. Boston, MA, USA. 30 Nov. - 4 Dec., 1997. [online] 505. p. 495-500. Available from: http://www.mrs.org/	en
heal.abstract	Micro-Raman spectroscopy is used to study mechanical stress distribution in polycrystalline silicon bridges on cavities micromachined in crystalline Si wafers. The influence of the processing parameters such as the thickness of polycrystalline membrane, the annealing conditions (before or after removal of the sacrificial porous-Si layer), are studied. The results indicate that the annealing reduces the residual stress by an order of magnitude and that the membrane thickness of 2.5 μm has the least residual stress.	en
heal.publisher	Materials Research Society	en
heal.fullTextAvailability	false
heal.conferenceName	1997 MRS Fall Meeting	en
heal.conferenceItemType	poster