Porous silicon of variable porosity under high hydrostatic pressure

dc.contributor.author	Παπαδημητρίου, Δήμητρα	el
dc.contributor.author	Ράπτης, Ιωάννης Σ.	el
dc.contributor.author	Νασιοπούλου, Ανδρούλα Γ.	el
dc.contributor.author	Καλτσάς, Γρηγόριος	el
dc.date.accessioned	2015-06-02T14:56:41Z
dc.date.available	2015-06-02T14:56:41Z
dc.date.issued	2015-06-02
dc.identifier.uri	http://hdl.handle.net/11400/14862
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.wiley-vch.de/	en
dc.subject	Pressure effects
dc.subject	Porous silicon
dc.subject	Photoluminescence measurements
dc.subject	επιδράσεις της πίεσης
dc.subject	πορώδες πυρίτιο
dc.subject	μετρήσεις φωτοφωταύγειας
dc.title	Porous silicon of variable porosity under high hydrostatic pressure	en
heal.type	journalArticle
heal.secondaryTitle	raman and photoluminescence studies	en
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμη
heal.classification	Φυσική
heal.classificationURI	http://zbw.eu/stw/descriptor/15685-2
heal.classificationURI	http://zbw.eu/stw/descriptor/15669-0
heal.classificationURI	N/A-Επιστήμη
heal.classificationURI	N/A-Φυσική
heal.identifier.secondary	DOI: 10.1002/(SICI)1521-396X(199801)165:1<43::AID-PSSA43>3.0.CO;2-K
heal.language	en
heal.access	campus
heal.publicationDate	1998-01
heal.bibliographicCitation	PAPADIMITRIOU, D., RAPTIS, I.S., NASSIOPOULOU, A.G. & KALTSAS, G. (1998). Porous silicon of variable porosity under high hydrostatic pressure: raman and photoluminescence studies. Physica Status Solidi (A). [online] 165 (1). p. 43-48. Available from: http://www.wiley-vch.de/	en
heal.abstract	Raman scattering and photoluminescence measurements have been performed in free standing porous silicon, for the first time at hydrostatic pressures up to 21 GPa. The pressure dependence of the porous silicon photoluminescence and Raman scattering has been systematically investigated as a function of porosity. Spectral features of both the Raman and PL bands exhibit almost the same transition pressures and depend on the maximum pressure achieved. Highly porous silicon (>80%) transforms at 18 GPa resulting in unrecoverable suppression of Raman and luminescence activity.	en
heal.publisher	Wiley-VCH Verlag	en
heal.journalName	Physica Status Solidi (A)	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true