Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction

dc.contributor.author	Φράγκης, Νικόλαος	el
dc.contributor.author	Van Landuyt, Joseph	en
dc.contributor.author	Καλτσάς, Γρηγόριος	el
dc.contributor.author	Τραυλός, Αναστάσιος	el
dc.contributor.author	Νασιοπούλου, Ανδρούλα Γ.	el
dc.date.accessioned	2015-06-02T15:13:54Z
dc.date.available	2015-06-02T15:13:54Z
dc.date.issued	2015-06-02
dc.identifier.uri	http://hdl.handle.net/11400/14867
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com/	en
dc.subject	Tetragonal phase
dc.subject	Deposition
dc.subject	Electron microscopy
dc.subject	τετραγωνική φάση
dc.subject	κατάθεση
dc.subject	Ηλεκτρονική μικροσκοπία
dc.title	Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμη
heal.classification	Φυσική
heal.classificationURI	http://zbw.eu/stw/descriptor/15685-2
heal.classificationURI	http://zbw.eu/stw/descriptor/15669-0
heal.classificationURI	N/A-Επιστήμη
heal.classificationURI	N/A-Φυσική
heal.identifier.secondary	doi:10.1016/S0022-0248(96)00745-2
heal.language	en
heal.access	campus
heal.publicationDate	1997-02
heal.bibliographicCitation	FRANGIS, N., VAN LANDUYT, J., KALTSAS, G., TRAVLOS, A. & NASSIOPOULOU, A.G. (1997). Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction. Journal of Crystal Growth. [online] 35 (1-4). p. 397-400. Available from: http://www.elsevier.com/[Accessed 14/05/1998]	en
heal.abstract	Erbium-suicide thin films were grown on Si(100) substrates under high vacuum either by single deposition of Er or by co-deposition of Er and Si, followed by annealing at 800-870°C for 30 min. The crystalline quality of the films as well as the growth characteristics were analysed by electron microscopy and diffraction techniques. The films have a thickness between 35 and 50 nm and consist of patches up to a few hundreds of nm. In the single Er deposited samples the epitaxial growth of a tetragonal phase with a single epitaxial mode was found. This phase is considered to be induced by the substrate orientation. In the co-deposition samples the same epitaxy occurs in combination with "multiple variant epitaxy" of patches with the hexagonal ErSi2 structure. The epitaxial relationships are analysed in detail.	en
heal.publisher	Elsevier	en
heal.journalName	Journal of Crystal Growth	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true