High crystalline quality erbium suicide films on (100) silicon, grown in high vacuum

dc.contributor.author	Καλτσάς, Γρηγόριος	el
dc.contributor.author	Τραυλός, Αναστάσιος	el
dc.contributor.author	Νασιοπούλου, Ανδρούλα Γ.	el
dc.contributor.author	Φράγκης, Νικόλαος	el
dc.contributor.author	Van Landuyt, Joseph	en
dc.date.accessioned	2015-06-02T15:48:38Z
dc.date.available	2015-06-02T15:48:38Z
dc.date.issued	2015-06-02
dc.identifier.uri	http://hdl.handle.net/11400/14872
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com/	en
dc.subject	Crystal microstructure
dc.subject	Thin films
dc.subject	annealing
dc.subject	Κρυστάλλινη μικροδομή
dc.subject	Λεπτές ταινίες
dc.subject	Ανόπτηση
dc.title	High crystalline quality erbium suicide films on (100) silicon, grown in high vacuum	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.keywordURI	http://lod.nal.usda.gov/9664
heal.identifier.secondary	DOI: 10.1016/0169-4332(96)00036-0
heal.language	en
heal.access	campus
heal.publicationDate	1996-08
heal.bibliographicCitation	KALTSAS, G., TRAVLOS, A., NASSIOPOULOU, A.G., FRANGIS, N. & VAN LANDUYT, J. (1996). High crystalline quality erbium suicide films on (100) silicon, grown in high vacuum. Applied Surface Science. [online] 102. p. 151-155. Available from: http://www.elsevier.com/[Accessed 02/03/1999]	en
heal.abstract	Erbium silicide films were grown in high vacuum (10-8 Torr) on (100) silicon substrates by erbium evaporation on a heated substrate and subsequent annealing. The substrate temperature was between 400-450°C and a second annealing step was given at 800-870°C for 30 min. Films with a thickness in the range of 40-50 nm were prepared. X-ray and electron diffraction were used for the characterisation of the grown films. Transmission electron microscopy characterisation revealed the very high crystalline quality of the films. They were almost single crystalline, of very large 'grains', up to a few hundreds of nm, slightly misoriented with respect to each other. The erbium silicide was found to possess a modulated structure, derived from a basic one of the ThSi2 type.	en
heal.publisher	Elsevier	en
heal.journalName	Applied Surface Science	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true