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dc.contributor.author Καλτσάς, Γρηγόριος el
dc.contributor.author Τραυλός, Αναστάσιος el
dc.contributor.author Νασιοπούλου, Ανδρούλα Γ. el
dc.contributor.author Φράγκης, Νικόλαος el
dc.contributor.author Van Landuyt, Joseph en
dc.date.accessioned 2015-06-02T15:48:38Z
dc.date.available 2015-06-02T15:48:38Z
dc.date.issued 2015-06-02
dc.identifier.uri http://hdl.handle.net/11400/14872
dc.rights Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.source http://www.elsevier.com/ en
dc.subject Crystal microstructure
dc.subject Thin films
dc.subject annealing
dc.subject Κρυστάλλινη μικροδομή
dc.subject Λεπτές ταινίες
dc.subject Ανόπτηση
dc.title High crystalline quality erbium suicide films on (100) silicon, grown in high vacuum en
heal.type journalArticle
heal.classification Technology
heal.classification Electrical engineering
heal.classification Τεχνολογία
heal.classification Ηλεκτρολογία Μηχανολογία
heal.classificationURI http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI **N/A**-Τεχνολογία
heal.classificationURI **N/A**-Ηλεκτρολογία Μηχανολογία
heal.keywordURI http://lod.nal.usda.gov/9664
heal.identifier.secondary DOI: 10.1016/0169-4332(96)00036-0
heal.language en
heal.access campus
heal.publicationDate 1996-08
heal.bibliographicCitation KALTSAS, G., TRAVLOS, A., NASSIOPOULOU, A.G., FRANGIS, N. & VAN LANDUYT, J. (1996). High crystalline quality erbium suicide films on (100) silicon, grown in high vacuum. Applied Surface Science. [online] 102. p. 151-155. Available from: http://www.elsevier.com/[Accessed 02/03/1999] en
heal.abstract Erbium silicide films were grown in high vacuum (10-8 Torr) on (100) silicon substrates by erbium evaporation on a heated substrate and subsequent annealing. The substrate temperature was between 400-450°C and a second annealing step was given at 800-870°C for 30 min. Films with a thickness in the range of 40-50 nm were prepared. X-ray and electron diffraction were used for the characterisation of the grown films. Transmission electron microscopy characterisation revealed the very high crystalline quality of the films. They were almost single crystalline, of very large 'grains', up to a few hundreds of nm, slightly misoriented with respect to each other. The erbium silicide was found to possess a modulated structure, derived from a basic one of the ThSi2 type. en
heal.publisher Elsevier en
heal.journalName Applied Surface Science en
heal.journalType peer-reviewed
heal.fullTextAvailability true


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Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες Except where otherwise noted, this item's license is described as Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες