Erbium suicide films on (100) silicon, grown in high vacuum

dc.contributor.author	Καλτσάς, Γρηγόριος	el
dc.contributor.author	Τραυλός, Αναστάσιος	el
dc.contributor.author	Σαλαμούρας, Ν.	el
dc.contributor.author	Νασιοπούλου, Ανδρούλα Γ.	el
dc.contributor.author	Ρέββα, Π.	el
dc.date.accessioned	2015-06-02T16:12:36Z
dc.date.issued	2015-06-02
dc.identifier.uri	http://hdl.handle.net/11400/14875
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com/	en
dc.subject	Growth mechanism
dc.subject	Silicon
dc.subject	X-ray diffraction
dc.subject	Μηχανισμός ανάπτυξης
dc.subject	Πυρίτιο
dc.subject	Περίθλαση ακτίνων Χ
dc.title	Erbium suicide films on (100) silicon, grown in high vacuum	en
heal.type	journalArticle
heal.secondaryTitle	fabrication and properties	en
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμη
heal.classification	Φυσική
heal.classificationURI	http://zbw.eu/stw/descriptor/15685-2
heal.classificationURI	http://zbw.eu/stw/descriptor/15669-0
heal.classificationURI	N/A-Επιστήμη
heal.classificationURI	N/A-Φυσική
heal.keywordURI	http://lod.nal.usda.gov/105826
heal.contributorName	Traverse, Agnès	en
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	1996-04-01
heal.bibliographicCitation	KALTSAS, G., TRAVLOS, A., SALAMOURAS, N., NASSIOPOULOU, A.G., REVVA, P., et al. (1996). Erbium suicide films on (100) silicon, grown in high vacuum: fabrication and properties. Thin Solid Films. [online] 275 (1-2). p. 87-90. Available from: http://www.elsevier.com/	en
heal.abstract	High crystalline quality Erbium suicide films with preferred orientation on (100) Si were obtained by (a) erbium deposition on Si in high vacuum and (b) co-deposition of Er and Si in a flux ratio of Si/Er close to 2 and subsequent annealing. Erbium suicide layers of thickness around 50 nm were obtained, which were characterized by X-ray diffraction, Rutherford backscattering spectroscopy (RBS), scanning electron microscopy and electrical measurements, including both resistivity measurements at room and low temperatures and current-voltage measurements on specially prepared Schottky diodes. High crystalline quality (only one orientation in the X-ray diffraction pattern) was obtained in case (a). Films of case (b) seem to be polycrystalline from the X-ray diffraction pattern but they show high channelling yield in channelling RBS. This is attributed to a first layer of good crystalline quality on silicon and a surface layer of less good crystallinity on top. Reduced surface and interface roughness was also obtained in case (b), resulting in current-voltage characteristics corresponding to an ideality factor close to 1.	en
heal.publisher	Elsevier	en
heal.journalName	Thin Solid Films	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false