Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation

dc.contributor.author	Ιωάννου - Σουγκλερίδης, Βασίλης	el
dc.contributor.author	Πουλάκης, Νικόλαος	el
dc.contributor.author	Δημητράκης, Παναγιώτης	el
dc.contributor.author	Normand, Pascal	en
dc.contributor.author	Πάτσης, Γιώργος	el
dc.date.accessioned	2015-06-07T17:24:44Z
dc.date.available	2015-06-07T17:24:44Z
dc.date.issued	2015-06-07
dc.identifier.uri	http://hdl.handle.net/11400/15505
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.subject	Diffusion current
dc.subject	Lifetime
dc.subject	Germanium
dc.subject	Τρέχουσα διάχυση
dc.subject	Διάρκεια ζωής
dc.subject	Γερμάνιο
dc.title	Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85054449
heal.contributorName	Δημουλάς, Αθανάσιος	en
heal.contributorName	Simoen, Eddy Roger	en
heal.identifier.secondary	DOI: 10.1016/j.sse.2012.11.012
heal.language	en
heal.access	campus
heal.publicationDate	2013
heal.bibliographicCitation	Ioannou-Sougleridis, V., Poulakis, N., Dimitrakis, P., Normand, P., Patsis, G. et al. (2013) Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation. "Solid-State Electronics", 81, p.19-26	en
heal.abstract	This work examines the influence of the annealing time at 350 °C to the reverse current and capacitance characteristics of p+/n junction diodes fabricated by platinum assisted dopant activation. The reverse current and capacitance characteristics are first separated into bulk and peripheral components. The bulk or volume component is further analyzed in terms of diffusion and generation currents which constitute the physical components of the bulk reverse current. This allows the extraction of the generation and recombination lifetimes as well as the effective position of the energy levels of the generation-recombination centers. The results indicate that for the used active area geometry, the periphery and the bulk current components coexist in comparable magnitudes. Annealing for 10 min provides the lowest reverse current with the highest generation and recombination lifetimes. Higher annealing times deteriorate the diode due to the formation of defects within the depletion region which reduce the generation and recombination lifetimes.	en
heal.journalName	Solid-State Electronics	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true