Thermally activated conduction mechanisms in silicon nitride MIS structures

dc.contributor.author	Καναπίτσας, Αθανάσιος	el
dc.contributor.author	Τσώνος, Χρήστος	el
dc.contributor.author	Τριάντης, Δήμος Α.	el
dc.contributor.author	Σταύρακας, Ηλίας	el
dc.contributor.author	Αναστασιάδης, Κίμων	el
dc.date.accessioned	2015-04-04T21:21:31Z
dc.date.available	2015-04-04T21:21:31Z
dc.date.issued	2015-04-05
dc.identifier.uri	http://hdl.handle.net/11400/8231
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com	en
dc.subject	Silicon nitride
dc.subject	Conduction mechanisms
dc.subject	TSDC
dc.subject	DC conductivity
dc.subject	Nιτρίδιο του πυριτίου
dc.subject	Mηχανισμοί αγωγιμότητας
dc.subject	DC αγωγιμότητα
dc.title	Thermally activated conduction mechanisms in silicon nitride MIS structures	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://zbw.eu/stw/descriptor/15685-2
heal.classificationURI	http://zbw.eu/stw/descriptor/15669-0
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.contributorName	Φωτόπουλος, Παναγιώτης	el
heal.contributorName	Πίσσης, Πολύκαρπος	el
heal.contributorName	Βαμβακάς, Βασίλης Ε.	el
heal.identifier.secondary	doi:10.1016/j.tsf.2009.10.112
heal.language	en
heal.access	free
heal.publicationDate	2010-02-26
heal.bibliographicCitation	KANAPITSAS, A., TSONOS, C., TRIANTIS, D.A., STAVRAKAS, I., ANASTASIADIS, C. ET AL. (2010). Thermally activated conduction mechanisms in silicon nitride MIS structures. Thin Solid Films. [Online] 518 (9). p.2357-2360. Available from: http://www.sciencedirect.com/ [Accessed 22/10/2009]	en
heal.abstract	This publication reports on thermally activated currents in n-silicon/Si3N4/Al structures. The samples prepared were examined by means of I–V, C–V, ac conductivity and thermally stimulated depolarisation current (TSDC) measurements. The results indicate that DC conductivity is controlled by charge diffusion. Both conductivity and TSDC measurements indicate that mobile carriers which are trapped at the Si/nitride interface for low temperatures are de-trapped when temperature approaches room temperature resulting in a fast increase of DC conductivity. Additionally it is found that at high temperatures the ac conductivity follows a power law with respect to frequency where the exponent is close to two. Implications of this type of variation are also discussed. The results were used in order to explain the contribution of defects to the conduction mechanisms and the device behaviour.	en
heal.publisher	Elsevier	en
heal.journalName	Thin Solid Films	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true