Thermally stimulated detrapping in porous silicon

dc.contributor.author	Αναστασιάδης, Κίμων	el
dc.contributor.author	Τριάντης, Δήμος Α.	el
dc.date.accessioned	2015-04-05T18:41:20Z
dc.date.available	2015-04-05T18:41:20Z
dc.date.issued	2015-04-05
dc.identifier.uri	http://hdl.handle.net/11400/8250
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com	en
dc.subject	Porous silicon
dc.subject	Thermally stimulated discharge currents
dc.subject	Traps
dc.subject	Πορώδες πυρίτιο
dc.subject	Παγίδες
dc.subject	Θερμικά τονωμένα ρεύματα απαλλαγής
dc.title	Thermally stimulated detrapping in porous silicon	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh95003725
heal.identifier.secondary	doi:10.1016/S0921-5107(99)00238-X
heal.language	en
heal.access	free
heal.publicationDate	2000-01-14
heal.bibliographicCitation	ANASTASIADIS, C. & TRIANTIS, D.A. (2000). Thermally stimulated detrapping in porous silicon. Materials Science and Engineering. [Online] 69-70. p.149-151. Available from: http://www.sciencedirect.com/ [Accessed 25/10/2000]	en
heal.abstract	A thermally stimulated current (TSC) methodology has been used to reveal the mechanisms of detrapping in porous Si (C. Bucci, R. Fieschi, G. Guidi, Phys. Rev. 148 (1966) 816). This thermally stimulated method consists of electrically polarizing a sample at temperature, T0, which is depolarized consequently during heating, giving rise to a depolarization or trap-discharge displacement current which can be recorded. When double layer dielectric-semiconductor materials such as porous silicon on a heavily doped silicon substrate are subjected to an electret formation cycle, charge trapping may easily occur. This is explained by the fact that the heterogeneity at the interface between Si and PSi is the source of numerous discontinuities and imperfections in the Si crystal in addition to those existing in the porous layer, all of which are capable of capturing electric carriers because the transition region near the interface may also produce new allowed electron states in the bandgap. The electrical behaviour of the whole material is affected by such an internal structure which is mostly similar to an extended semiconductor surface due to its pores (R.C. Anderson, R.S. Muller, C.W. Tobias, J. Electrochem. Soc. 138 (1991) 3406). Thus, one may state that the electrical properties of PSi are close to those of a surface dominated semiconductor. In the present work an attempt has been made to calculate the activation energy of hole traps within porous Si.	en
heal.publisher	Elsevier	en
heal.journalName	Materials Science and Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true