Show simple item record

dc.contributor.author Αναστασιάδης, Κίμων el
dc.contributor.author Τριάντης, Δήμος Α. el
dc.date.accessioned 2015-04-05T18:41:20Z
dc.date.available 2015-04-05T18:41:20Z
dc.date.issued 2015-04-05
dc.identifier.uri http://hdl.handle.net/11400/8250
dc.rights Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.source http://www.elsevier.com en
dc.subject Porous silicon
dc.subject Thermally stimulated discharge currents
dc.subject Traps
dc.subject Πορώδες πυρίτιο
dc.subject Παγίδες
dc.subject Θερμικά τονωμένα ρεύματα απαλλαγής
dc.title Thermally stimulated detrapping in porous silicon en
heal.type journalArticle
heal.classification Technology
heal.classification Electrical engineering
heal.classification Τεχνολογία
heal.classification Ηλεκτρολογία Μηχανολογία
heal.classificationURI http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI **N/A**-Τεχνολογία
heal.classificationURI **N/A**-Ηλεκτρολογία Μηχανολογία
heal.keywordURI http://id.loc.gov/authorities/subjects/sh95003725
heal.identifier.secondary doi:10.1016/S0921-5107(99)00238-X
heal.language en
heal.access free
heal.publicationDate 2000-01-14
heal.bibliographicCitation ANASTASIADIS, C. & TRIANTIS, D.A. (2000). Thermally stimulated detrapping in porous silicon. Materials Science and Engineering. [Online] 69-70. p.149-151. Available from: http://www.sciencedirect.com/ [Accessed 25/10/2000] en
heal.abstract A thermally stimulated current (TSC) methodology has been used to reveal the mechanisms of detrapping in porous Si (C. Bucci, R. Fieschi, G. Guidi, Phys. Rev. 148 (1966) 816). This thermally stimulated method consists of electrically polarizing a sample at temperature, T0, which is depolarized consequently during heating, giving rise to a depolarization or trap-discharge displacement current which can be recorded. When double layer dielectric-semiconductor materials such as porous silicon on a heavily doped silicon substrate are subjected to an electret formation cycle, charge trapping may easily occur. This is explained by the fact that the heterogeneity at the interface between Si and PSi is the source of numerous discontinuities and imperfections in the Si crystal in addition to those existing in the porous layer, all of which are capable of capturing electric carriers because the transition region near the interface may also produce new allowed electron states in the bandgap. The electrical behaviour of the whole material is affected by such an internal structure which is mostly similar to an extended semiconductor surface due to its pores (R.C. Anderson, R.S. Muller, C.W. Tobias, J. Electrochem. Soc. 138 (1991) 3406). Thus, one may state that the electrical properties of PSi are close to those of a surface dominated semiconductor. In the present work an attempt has been made to calculate the activation energy of hole traps within porous Si. en
heal.publisher Elsevier en
heal.journalName Materials Science and Engineering en
heal.journalType peer-reviewed
heal.fullTextAvailability true


Files in this item

  • Name: 1-s2.0-S092151079900238X-main.pdf
    Size: 68.53Kb
    Format: PDF

The following license files are associated with this item:

Show simple item record

Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες Except where otherwise noted, this item's license is described as Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες