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Transport parameters of n-type GaSb

Author/Creator: Κουρκουτάς, Κωνσταντίνος Δ.; Μπεκρής, Περικλής Δ.; Παπαϊωάννου, Γεώργιος; Ευθυμίου, Π.Κ.

Publication Date: 1984-03
Electron damage studies in GaP at low temperatures

Author/Creator: Ευθυμίου, Π.Κ.; Παπαϊωάννου, Γεώργιος; Καλιακάτσος, Ιωάννης Α.; Κουρκουτάς, Κωνσταντίνος Δ.; Banbury, P.C.

Publication Date: 1986-04
Transport properties of praseodymium doped p-type In0.53Ga0.47As layers

Author/Creator: Κουρκουτάς, Κωνσταντίνος Δ.; Kulifayova, M.; Παπαϊωάννου, Γεώργιος; Κόρδος, Π.; Ιωάννου-Σουγλερίδης, Βασίλης

Publication Date: 1991-05
Effect of electron irradiation on the mobility profile in GaAs FATFETs

Author/Creator: Szentpali, B.; Kovacs, B.; Κουρκουτάς, Κωνσταντίνος Δ.; Huber, D.; Ευθυμίου, Π.Κ.

Publication Date: 1991-11
DLTS studies of defects in GaP:Te before and after electron irradiation

Author/Creator: Banbury, P.C.; Ευθυμίου, Π.Κ.; Κουρκουτάς, Κωνσταντίνος Δ.; Ζάρδας, Γεώργιος

Publication Date: 1990-04
Dependence of the mobility limit upon the Fermi level position in direct gap III–V group semiconductors

Author/Creator: Κουρκουτάς, Κωνσταντίνος Δ.; Ευθυμίου, Π.Κ.; Παπαϊωάννου, Γεώργιος

Publication Date: 1990-06
A study of the profile of the E3 electron trap in GaAs

Author/Creator: Κουρκουτάς, Κωνσταντίνος Δ.; Kovacs, B.; Ευθυμίου, Π.Κ.; Szentpali, B.; Somogyi, K.

Publication Date: 1994-01
Correction of the drift mobility measurements in GaAs MESFETS

Author/Creator: Κουρκουτάς, Κωνσταντίνος Δ.; Ευθυμίου, Π.Κ.; Szentpali, B.; Kocacs, B.; Somogyi, K.

Publication Date: 1991-06
Transport parameters in illuminated layers of semi-insulating GaAs

Author/Creator: Ευθυμίου, Π.Κ.; Παπαϊωάννου, Γεώργιος; Κουρκουτάς, Κωνσταντίνος Δ.; Banbury, P.C.

Publication Date: 1987-05
Determination of the scattering mechanisms in p-type semiconductors of the III–V group

Author/Creator: Κουρκουτάς, Κωνσταντίνος Δ.; Παπαϊωάννου, Γεώργιος; Ευθυμίου, Π.Κ.; Ζάρδας, Γεώργιος

Publication Date: 1988-08

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Transport parameters of n-type GaSb

Electron damage studies in GaP at low temperatures

Transport properties of praseodymium doped p-type In0.53Ga0.47As layers

Effect of electron irradiation on the mobility profile in GaAs FATFETs

DLTS studies of defects in GaP:Te before and after electron irradiation

Dependence of the mobility limit upon the Fermi level position in direct gap III–V group semiconductors

A study of the profile of the E3 electron trap in GaAs

Correction of the drift mobility measurements in GaAs MESFETS

Transport parameters in illuminated layers of semi-insulating GaAs

Determination of the scattering mechanisms in p-type semiconductors of the III–V group

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