Electron damage studies in GaP at low temperatures

dc.contributor.author	Ευθυμίου, Π.Κ.	el
dc.contributor.author	Παπαϊωάννου, Γεώργιος	el
dc.contributor.author	Καλιακάτσος, Ιωάννης Α.	el
dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Banbury, P.C.	en
dc.date.accessioned	2015-05-04T19:14:10Z
dc.date.available	2015-05-04T19:14:10Z
dc.date.issued	2015-05-04
dc.identifier.uri	http://hdl.handle.net/11400/9694
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com/science/article/pii/0038109886908410	en
dc.subject	Ηλεκτρονικές μελέτες
dc.subject	Ζημιές
dc.subject	θερμοκρασία
dc.subject	ακτινοβολία
dc.subject	Electron studies
dc.subject	Damage
dc.subject	Temperature
dc.subject	Irradiation
dc.title	Electron damage studies in GaP at low temperatures	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85068277
heal.identifier.secondary	DOI: 10.1016/0038-1098(86)90841-0
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1986-04
heal.bibliographicCitation	Euthymiou, P.C., Papaioannou, G.J., Kaliakatsos, J.A., Kourkoutas, C.D. and Banbury, P.C. (1986) Electron damage studies in GaP at low temperatures. Solid State Communications. [Online] 58 (3), pp.193-195. Available from: http://www.sciencedirect.com [Accessed 04/05/2015]	en
heal.abstract	The defects introduced in p-type Zn doped GaP by beta particle irradiation, of 1 MeV average energy, at low temperatures are monitored by bridge measurements of capacitance and delectric losses of a capacitor. The results of measurements, between 15 and 65 K, are attributed, in two different temperature regimes, to a GaP capacitor with losses arising from (a) an a.c hopping conduction process, below 45 K, and (b) a band conduction, above 45 K. Electron irradiation affects both hopping and band conduction as well as the transition temperature.	en
heal.publisher	Elsevier	en
heal.journalName	Solid State Communications	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true