Transport parameters in illuminated layers of semi-insulating GaAs

dc.contributor.author	Ευθυμίου, Π.Κ.	el
dc.contributor.author	Παπαϊωάννου, Γεώργιος	el
dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Banbury, P.C.	el
dc.date.accessioned	2015-05-04T19:35:53Z
dc.date.available	2015-05-04T19:35:53Z
dc.date.issued	2015-05-04
dc.identifier.uri	http://hdl.handle.net/11400/9699
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com/science/article/pii/0038109887910477	en
dc.subject	Μετρήσεις
dc.subject	φωτόνια ενέργειας
dc.subject	αγωγιμότητα
dc.subject	Measurements
dc.subject	Photons
dc.subject	electrical conductivity
dc.title	Transport parameters in illuminated layers of semi-insulating GaAs	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85101398
heal.keywordURI	http://lod.nal.usda.gov/28491
heal.identifier.secondary	DOI: 10.1016/0038-1098(87)91047-7
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1987-05
heal.bibliographicCitation	Euthymiou, P.C., Papaioannou, J.A., Kourkoutas, C.D. and Banbury, P.C. (1987) Transport parameters in illuminated layers of semiinsulating GaAs. Solid State Communications. [Online] 62 (6), pp.423-425. Available from: http://www.sciencedirect.com [Accessed 04/05/2015]	en
heal.abstract	Measurements are reported on semiinsulating p-type Gallium Arsenide specimens illuminated with photons of energy greater than the energy gap. An excited layer is defined of thickness d given by the sum of the radiation penetration depth and the ambipolar diffusion length. Concentrations n and mobilities μ of the carriers in this layer are determined from galvanomagnetic effects in light and in darkness. The concentration n shows a slow decrease with increasing wavelength out to the absorption edge, where it falls abruptly; μ falls with rising photon energy. As a function of increasing intensity, the mobility remains constant, while n rises linearly with photon-excitation rate. The results are discussed in terms of the variations of d. Further an attempt has been made to find the dependence between electron and hole concentrations in the excited layer measuring the variations of short circuit photomagnetoelectric current (IPME) as a function of excess conductance (ΔG).	en
heal.publisher	Elsevier	en
heal.journalName	Solid State Communications	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true