A study of the gain mechanisms in GaAs planar optical photoconductive detectors

dc.contributor.author	Παπαϊωάννου, Γεώργιος	el
dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Θεοφάνους, Νικηφόρος	el
dc.contributor.author	Αραπογιάννη, Αγγελική	el
dc.date.accessioned	2015-05-04T19:56:24Z
dc.date.available	2015-05-04T19:56:24Z
dc.date.issued	2015-05-04
dc.identifier.uri	http://hdl.handle.net/11400/9701
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://onlinelibrary.wiley.com/doi/10.1002/pssa.2211040264/abstract	en
dc.subject	Μηχανισμοί κέρδους
dc.subject	Ανιχνευτές
dc.subject	Φωτοαγώγιμα επίπεδα
dc.subject	Gain Mechanisms
dc.subject	Detectors
dc.subject	Planar Photoconductive
dc.title	A study of the gain mechanisms in GaAs planar optical photoconductive detectors	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532'
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.identifier.secondary	DOI: 10.1002/pssa.2211040264
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1987-12
heal.bibliographicCitation	Papaioannou, G.J., Kourkoutas, C.D., Theofanous, N.G. and Arapoyanni, T.A. (1987) A study of the Gain Mechanisms in GaAs Planar Photoconductive Detectors. Physica Status Solidi. [Online] 104 (2), pp.K141-K146. Available from: http://onlinelibrary.wiley.com [Accessed 04/05/2015]	en
heal.abstract	Results on GaAs planar photoconductive detectors, characterized by high speed and moderate gain, have been successively reported by many workers /1 to 6/. Under cw illumination these devices ex\hibit large gains, in excess of 10 , strongly depending on both light intensity and temperature. On the other hand, their dynamic gain decreases when the frequency of the illumination intensity modulation is increased. The mechanisms already proposed to explain this behavior overlook at least two not negligible factors. Precisely, for the behavior of the cw illumination gain only the spatial separation of the excess carriers by the surface potential barrier has been considered /3/ while the contribution of the active layer-substrate potential barrier has been neglected. Also, for the dynamic gain a simple model of generation-recombination has been proposed governed by a Poisson law /4/* which does not include the effect of minority carrier trapping. The aim of the present work is to take into account these parameters and investigate the contribution of each one to the device gain. The device dynamic gain G(w) at an angular frequency w , defined as the ratio of the number of electrons collected in the load to the number of incident photons on the active layer, can be expressed as /6/ 3 where% is the majority carrier effective lifetime and t the corresponding transit time through the device.	en
heal.journalName	Physica Status Solidi	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true