Determination of the scattering mechanisms in p-type semiconductors of the III–V group

dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Παπαϊωάννου, Γεώργιος	el
dc.contributor.author	Ευθυμίου, Π.Κ.	el
dc.contributor.author	Ζάρδας, Γεώργιος	el
dc.date.accessioned	2015-05-04T20:14:37Z
dc.date.available	2015-05-04T20:14:37Z
dc.date.issued	2015-05-04
dc.identifier.uri	http://hdl.handle.net/11400/9703
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com/science/article/pii/0038109888901858	en
dc.subject	Μηχανισμοί σκέδασης
dc.subject	Ημιαγωγοί
dc.subject	κινητικότητα
dc.subject	ιονισμένες προσμείξεις
dc.subject	πολικά οπτικά φωνόνια
dc.subject	scattering mechanisms
dc.subject	Semiconductors
dc.subject	mobility
dc.subject	ionized impurities
dc.subject	polar optical phonons
dc.title	Determination of the scattering mechanisms in p-type semiconductors of the III–V group	en
heal.type	journalArticle
heal.secondaryTitle	the case of Zn-doped GaP and natural (undoped) GaSb	en
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.identifier.secondary	DOI: 10.1016/0038-1098(88)90185-8
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1988-08
heal.bibliographicCitation	Kourkoutas, C.D. Papaioannou, G.J., Euthymiou, P.C. and Zardas, G.E. (1988) Determination of the scattering mechanisms in p-type semiconductors of the III–V group: The case of Zn-doped GaP and natural (undoped) GaSb. Solid State Communications. [Online] 67 (6), pp.651-655. Available from: http://www.sciencedirect.com [Accessed 04/05/2015]	en
heal.abstract	The introduction in the Matthiessen's rule of scattering mechanisms on acoustical and polar optical phonons, on ionized impurities, space charge and interband scattering of the light holes fits the experimental data of conductivity and hole mobility by means of successive iterations. The concentrations NA, ND, as well as the contribution of each individual scattering mechanism are estimated. The method is applied in the case of Zn:GaP and natural (undoped) GaSb.	en
heal.publisher	Elsevier	en
heal.journalName	Solid State Communications	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true