Dependence of the mobility limit upon the Fermi level position in direct gap III–V group semiconductors

dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Ευθυμίου, Π.Κ.	el
dc.contributor.author	Παπαϊωάννου, Γεώργιος	el
dc.date.accessioned	2015-05-04T21:13:55Z
dc.date.available	2015-05-04T21:13:55Z
dc.date.issued	2015-05-05
dc.identifier.uri	http://hdl.handle.net/11400/9706
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com/science/article/pii/003810989090473O	en
dc.subject	Ημιαγωγοί
dc.subject	Κινητικότητα
dc.subject	θεωρητικοί υπολογισμοί
dc.subject	ευαισθησία
dc.subject	θερμοκρασία
dc.subject	semiconductors
dc.subject	mobility
dc.subject	theoretical calculations
dc.subject	sensitivity
dc.subject	temperature
dc.title	Dependence of the mobility limit upon the Fermi level position in direct gap III–V group semiconductors	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.identifier.secondary	DOI: 10.1016/0038-1098(90)90473-O
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1990-06
heal.bibliographicCitation	Euthymiou, P.C., Papaioannou, G.J. and Kourkoutas, C.D. (1990) Dependence of the mobility limit upon the Fermi level position in direct gap III–V group semiconductors. Solid State Communications. [Online] 74 (9), pp.999-1001. Available from: http://www.sciencedirect.com [Accessed 04/05/2015]	en
heal.abstract	A relation between the shift of the Fermi level and the Hall mobility at room temperature is presented for a variety of direct gap III–V group semiconductors. The theoretical calculations concern particularly the sensitivity of the mobility due to polar optical phonon scattering only to the free carrier concentration and indicate the upper limit of the mobility in the Fermi energy range −10 < ξ < 3.	en
heal.publisher	Elsevier	en
heal.journalName	Solid State Communications	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true