Transport properties of praseodymium doped p-type In0.53Ga0.47As layers

dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Kulifayova, M.	en
dc.contributor.author	Παπαϊωάννου, Γεώργιος	el
dc.contributor.author	Κόρδος, Π.	el
dc.contributor.author	Ιωάννου-Σουγλερίδης, Βασίλης	el
dc.date.accessioned	2015-05-04T22:00:38Z
dc.date.available	2015-05-04T22:00:38Z
dc.date.issued	2015-05-05
dc.identifier.uri	http://hdl.handle.net/11400/9708
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com/science/article/pii/0038109891903734	en
dc.subject	Μεταφορά
dc.subject	νοθευμένο πρασεοδύμιο
dc.subject	Επίπεδα
dc.subject	μηχανισμός σκέδασης
dc.subject	θερμοκρασία
dc.subject	Transport
dc.subject	Praseodymium
dc.subject	Layers
dc.subject	scattering mechanism
dc.subject	temperature
dc.title	Transport properties of praseodymium doped p-type In0.53Ga0.47As layers	en
heal.type	journalArticle
heal.classification	Φυσική
heal.classification	Μηχανική
heal.classification	Physics
heal.classification	Engineering
heal.classificationURI	N/A-Φυσική
heal.classificationURI	N/A-Μηχανική
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	http://skos.um.es/unescothes/C01363
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85106095
heal.contributorName	Novak, J.	en
heal.identifier.secondary	DOI: 10.1016/0038-1098(91)90373-4
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1991-05
heal.bibliographicCitation	Kourkoutas, C. D., Novak, J., Kulifayova, M., Papaioannou, G.J., Kordos, P. et al (1991) Transport properties of praseodymium doped p-type In0.53Ga0.47As layers. Solid State Communications. [Online] 78 (6), pp.543-546. Available from: http://www.sciencedirect.com [Accessed 04/05/2015]	en
heal.abstract	The scattering mechanisms of holes in In0.53Ga0.47As layers doped with Pr are investigated by analyzing the conductivity and Hall mobility data. The contribution of each individual scattering mechanism is calculated and values for the characteristic scattering parameters are obtained. Scattering by space charge reduces the Hall mobility up to 50% at room temperature being therefore the main scattering mechanism.	en
heal.publisher	Elsevier	en
heal.journalName	Solid State Communications	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true