The PHOTOFET method in submicrometre GaAs MESFETS

dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Παπαϊωάννου, Γεώργιος	el
dc.contributor.author	Ιωάννου-Σουγλερίδης, Βασίλης	el
dc.contributor.author	Lalinski, T.	en
dc.contributor.author	Kuzmik, J.	en
dc.date.accessioned	2015-05-04T22:34:48Z
dc.date.available	2015-05-04T22:34:48Z
dc.date.issued	2015-05-05
dc.identifier.uri	http://hdl.handle.net/11400/9710
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://iopscience.iop.org/0268-1242/7/7/011	en
dc.subject	ρεύμα διαρροής
dc.subject	επίδραση του υποστρώματος
dc.subject	ηλεκτρική αγωγιμότητα
dc.subject	ηλεκτρομαγνητική ακτινοβολία
dc.subject	substrate leakage
dc.subject	current effect
dc.subject	Electric conductivity
dc.subject	electromagnetic radiation
dc.title	The PHOTOFET method in submicrometre GaAs MESFETS	en
heal.type	journalArticle
heal.secondaryTitle	substrate leakage current effect	en
heal.classification	Φυσική
heal.classification	Τεχνολογία
heal.classification	Physics
heal.classification	Technology
heal.classificationURI	N/A-Φυσική
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85041621
heal.keywordURI	http://lod.nal.usda.gov/17516
heal.contributorName	Porges, M.	en
heal.identifier.secondary	DOI: 10.1088/0268-1242/7/7/011
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1992
heal.bibliographicCitation	Kourkoutas, C.D., Papaioannou, G.J., Ioannou-Sougleridis, V., Lalinski, T., Kuzmik, J. et al. (1992) The PHOTOFET method in submicrometre GaAs MESFETS: substrate leakage current effect. Semiconductors Science and Technology. [Online] 7, p.935. Available from: http://iopscience.iop.org [Accessed 04/05/2015]	en
heal.abstract	The PHOTOFET method is applied to submicrometre MESFETS processed on ion-implanted Cr-doped substrates. It is demonstrated that the magnitude of the photoconductivity both under extrinsic and intrinsic illumination is determined by the substrate leakage current, which is a function of the device drain bias. A semiempirical modeling of the dependence of the photoconductivity on the device bias gives a power-law relation between the leakage current and the drain bias.	en
heal.journalName	Semiconductors Science and Technology	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true