Effect of electron irradiation on the mobility profile in GaAs FATFETs

dc.contributor.author	Szentpali, B.	en
dc.contributor.author	Kovacs, B.	en
dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Huber, D.	en
dc.contributor.author	Ευθυμίου, Π.Κ.	el
dc.date.accessioned	2015-05-05T19:09:15Z
dc.date.available	2015-05-05T19:09:15Z
dc.date.issued	2015-05-05
dc.identifier.uri	http://hdl.handle.net/11400/9768
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com/science/article/pii/003810989190138L	en
dc.subject	ακτινοβολία
dc.subject	κινητικότητα
dc.subject	ηλεκτρόνιο
dc.subject	θερμοκρασία
dc.subject	Irradiation
dc.subject	Drift mobility
dc.subject	Electron
dc.subject	temperature
dc.title	Effect of electron irradiation on the mobility profile in GaAs FATFETs	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85068277
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85039539
heal.contributorName	Ζάρδας, Γεώργιος	el
heal.identifier.secondary	DOI: 10.1016/0038-1098(91)90138-L
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1991-11
heal.bibliographicCitation	Szentpali, B., Kovacs, B., Huber, D., Kourkoutas, C.D., Euthymiou, P.C. et al. (1991) Effect of electron irradiation on the mobility profile in GaAs FATFETs. Solid State Communications. [Online] 80 (5), pp.321-323. Available from: http://www.sciencedirect.com [Accessed 05/05/2015]	en
heal.abstract	The influence of the electron and hole traps, introduced by electron irradiation, on the drift mobility and carrier concentration profiles of the GaAs epitaxial layer structure was investigated. The DLTS and DLOS measurements indicated three electron traps and four hole traps identified to already known. The mobility profile was analyzed as a function of temperature T #62; 175 K in terms of lattice scattering (acoustical and polar optical phonons) and scattering on ionized impurities and space charge (clusters) produced mainly by irradiation.	en
heal.publisher	Elsevier	en
heal.journalName	Solid State Communications	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true