Effect of α-particle irradiation on AlGaAs/GaAs planar photoconductive detectors at low temperatures

dc.contributor.author	Ζάρδας, Γεώργιος	el
dc.contributor.author	Ευθυμίου, Π.Κ.	el
dc.contributor.author	Συμεωνίδης, Χρυσολέων	el
dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Γιαννακόπουλος, Παναγιώτης	el
dc.date.accessioned	2015-05-05T19:36:20Z
dc.date.available	2015-05-05T19:36:20Z
dc.date.issued	2015-05-05
dc.identifier.uri	http://hdl.handle.net/11400/9769
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dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
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dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://onlinelibrary.wiley.com/doi/10.1002/pssa.2211330129/abstract	en
dc.subject	ακτινοβολία
dc.subject	Σωματίδια
dc.subject	Ανιχνευτές
dc.subject	θερμοκρασία
dc.subject	κινητικότητα
dc.subject	Φωτοαγώγιμο
dc.subject	Irradiation
dc.subject	Particles
dc.subject	Detectors
dc.subject	temperature
dc.subject	Drift mobility
dc.subject	Photoconductive
dc.title	Effect of α-particle irradiation on AlGaAs/GaAs planar photoconductive detectors at low temperatures	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85068277
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85039539
heal.identifier.secondary	DOI: 10.1002/pssa.2211330129
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1992-09
heal.bibliographicCitation	Zardas, G.E., Euthymiou, P.C., Symeonidis, C., Kourkoutas, C.D. and Yannakopoulos, P.H. (1992) Effect of alpha Particles Irradiation on AlGaAs/GaAs Planar Photoconductive Detectors at low Temperatures. Physica Status Solidi (a). [Online] 133 (1), pp.K49-K52. Available from: http://onlinelibrary.wiley.com Accessed 05/05/2015]	en
heal.abstract	Introduction: The effect of a-particle irradiation on AlGaAsIGaAs heterostructures has been studied by many investigators [l to 31. In the present note we study the effect of 2.84 MeV a-particle irradiation on the properties of AlGaAs/GaAs heterostructures by measurements of photoconduction current as a function of the wavelength at various temperatures from 200 to 350 K before and after irradiation. Experimental techniques The AlGaAsIGaAs specimen consisted of eight layers as follows: first layer 100 nm undoped GaAs; second, fourth, and sixth layers 10 nm AlGaAs; third and fifth layers 10 nm GaAs; seventh layer 200 nm GaAs; eighth layer semi-insulating GaAs substrate. Two semicircular gold contacts were formed by evaporation on the first layer. The distance between them is 100 pm. The illumination reached the surface of the first layer. The current was measured by a Carry vibrating reed electrometer. The specimen was enclosed in the cryostat of a gas helium circulated machine and the window of the cryostat was closed by a Mylar sheet of 12 pm thickness. The total dose of a-particles from a 0.6 mC Am source was 8.94 x 10’’ and 4.77 x 10” particles/cm’ for specimens No. 3 and No. 4, respectively. Specimen No. 3 was irradiated at T = 200 K, while specimen No. 4 at T = 293 K. We calculated the range of the 2.84 MeV a-particles inside GaAs in the direction to the vertical to the surface according to the Geiger rule and found it equal to 6.4 pm. This means that the a-particle goes through the whole specimen. Results and discussion In Fig. 1 the photocurrent spectra for various temperatures are shown before irradiation (a) and after irradiation at 293 K and annealing at 350 K (b). The peak of the spectrum taken at 293 K is almost the same as that of the spectrum of the same structure (except of some small differences in the thickness of the layer) taken at 200 K [4]. After a-particle irradiation at 293 K the photocurrent peak is shifted to 880 nm (Fig. 1 b) and a decrease of the photocurrent at the peak of about 60% is observed. A greater shift has been found after electron irradiation of almost the same structure [4]. As the temperature decreases, the peak is shifted to smaller wavelengths and appeared at 200 K at the same wavelength as before irradiation (Fig. la, b). As the temperature is lowered from 293 to 200 K, the photocurrent at the peak decreases four times before irradiation and three times after irradiation.	en
heal.journalName	Physica Status Solidi (a)	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true