Show simple item record Κουρκουτάς, Κωνσταντίνος Δ. el Kovacs, B. en Ευθυμίου, Π.Κ. el Szentpali, B. en Somogyi, K. en 2015-05-05T19:55:32Z 2015-05-05T19:55:32Z 2015-05-05
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dc.rights Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες *
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dc.source en
dc.subject ακτινοβολία
dc.subject Ηλεκτρικά χαρακτηριστικά
dc.subject θερμοκρασία
dc.subject Irradiation
dc.subject Electric Characteristics
dc.subject temperature
dc.title The effect of electron irradiation dose on the profile of electric characteristics of GaAs VPE layers en
heal.type journalArticle
heal.classification Επιστήμες
heal.classification Φυσική
heal.classification Science
heal.classification Physics
heal.classificationURI **N/A**-Επιστήμες
heal.classificationURI **N/A**-Φυσική
heal.contributorName Banbury, P.C. en
heal.contributorName Ζάρδας, Γεώργιος el
heal.identifier.secondary DOI: 10.1002/pssa.2211350135
heal.language en
heal.access campus
heal.recordProvider Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε el
heal.publicationDate 1993-01
heal.bibliographicCitation Kourkoutas, C.D., Kovacs, B., Euthymiou, P.C., Szentpali, B., Somogyi, K. et al. (1993) The Effect of Electron Irradiation Dose on the Profile of Electric Characteristics of GaAs VPE Layers. Physica Status Solidi (a). [Online] 135 (1), pp.K21-K24. Available from: [Accessed 05/05/2015] en
heal.abstract The electric properties of electron irradiated GaAs have been extensively studied by various authors [l, 21. In a recent study of the electron mobility profile of GaAs MESFETs it was reported that the contribution of the non-lattice scattering terms (ionized impurities and clusters) to the total free electron scattering probability increase after irradiation versus depth at distances d > 0.2 pm below the Schottky contact [3]. In the present note we report conductivity (c) and concentration (ND - NA) profiles up to 2 km below the surface on n-type GaAs layers before and after irradiation with 0.65 MeV electrons. Annealing results are also reported. We prepared on semi-insulating Cr-doped GaAs wafers VPE grown sulfur-doped n-type GaAs layers of two different thicknesses, i.e. 0.36 pm with free electron concentration 5 x 1OI6 cmW3a nd 5 vm with free electron concentration 2 x 1015 ~ m - S~ch.o ttky contacts of a Cr (70 nm)/Au (400 nm) layer were applied by vacuum evaporation. Electron irradiation at 0.65 MeV was carried out at room temperature. Low irradiation doses were chosen to prevent the formation of clusters. In Table 1 the characteristics and irradiation doses of the individual samples are given. The concentration ND - N, was obtained by differential capacitance measurements with 1 MHz small ac signal. The conductivity and concentration profiles were measured before and after irradiation. en
heal.journalName Physica Status Solidi (a) en
heal.journalType peer-reviewed
heal.fullTextAvailability true

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