The effect of electron irradiation dose on the profile of electric characteristics of GaAs VPE layers

dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Kovacs, B.	en
dc.contributor.author	Ευθυμίου, Π.Κ.	el
dc.contributor.author	Szentpali, B.	en
dc.contributor.author	Somogyi, K.	en
dc.date.accessioned	2015-05-05T19:55:32Z
dc.date.available	2015-05-05T19:55:32Z
dc.date.issued	2015-05-05
dc.identifier.uri	http://hdl.handle.net/11400/9770
dc.rights	An error occurred on the license name.	*
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	An error occurred getting the license - uri.	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://onlinelibrary.wiley.com/doi/10.1002/pssa.2211350135/abstract	en
dc.subject	ακτινοβολία
dc.subject	Ηλεκτρικά χαρακτηριστικά
dc.subject	θερμοκρασία
dc.subject	Irradiation
dc.subject	Electric Characteristics
dc.subject	temperature
dc.title	The effect of electron irradiation dose on the profile of electric characteristics of GaAs VPE layers	en
heal.type	journalArticle
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classification	Science
heal.classification	Physics
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85068277
heal.contributorName	Banbury, P.C.	en
heal.contributorName	Ζάρδας, Γεώργιος	el
heal.identifier.secondary	DOI: 10.1002/pssa.2211350135
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1993-01
heal.bibliographicCitation	Kourkoutas, C.D., Kovacs, B., Euthymiou, P.C., Szentpali, B., Somogyi, K. et al. (1993) The Effect of Electron Irradiation Dose on the Profile of Electric Characteristics of GaAs VPE Layers. Physica Status Solidi (a). [Online] 135 (1), pp.K21-K24. Available from: http://onlinelibrary.wiley.com [Accessed 05/05/2015]	en
heal.abstract	The electric properties of electron irradiated GaAs have been extensively studied by various authors [l, 21. In a recent study of the electron mobility profile of GaAs MESFETs it was reported that the contribution of the non-lattice scattering terms (ionized impurities and clusters) to the total free electron scattering probability increase after irradiation versus depth at distances d > 0.2 pm below the Schottky contact [3]. In the present note we report conductivity (c) and concentration (ND - NA) profiles up to 2 km below the surface on n-type GaAs layers before and after irradiation with 0.65 MeV electrons. Annealing results are also reported. We prepared on semi-insulating Cr-doped GaAs wafers VPE grown sulfur-doped n-type GaAs layers of two different thicknesses, i.e. 0.36 pm with free electron concentration 5 x 1OI6 cmW3a nd 5 vm with free electron concentration 2 x 1015 ~ m - S~ch.o ttky contacts of a Cr (70 nm)/Au (400 nm) layer were applied by vacuum evaporation. Electron irradiation at 0.65 MeV was carried out at room temperature. Low irradiation doses were chosen to prevent the formation of clusters. In Table 1 the characteristics and irradiation doses of the individual samples are given. The concentration ND - N, was obtained by differential capacitance measurements with 1 MHz small ac signal. The conductivity and concentration profiles were measured before and after irradiation.	en
heal.journalName	Physica Status Solidi (a)	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true