Long range effect in ion-implanted GaAs

dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Aleshchenko, Yu. A.	en
dc.contributor.author	Bobrova, E.A.	en
dc.contributor.author	Vavilov, V.S.	en
dc.contributor.author	Vodopyanov, L.K.	en
dc.date.accessioned	2015-05-05T20:18:39Z
dc.date.available	2015-05-05T20:18:39Z
dc.date.issued	2015-05-05
dc.identifier.uri	http://hdl.handle.net/11400/9773
dc.rights	An error occurred on the license name.	*
dc.rights.uri	An error occurred getting the license - uri.	*
dc.source	http://www.tandfonline.com/doi/abs/10.1080/10420159308220210	en
dc.subject	εμφύτευση ιόντων
dc.subject	μακρά αποτέλεσμα του φάσματος
dc.subject	ηλεκτρομαγνητική ακτινοβολία
dc.subject	αγωγιμότητα
dc.subject	Ion implantation
dc.subject	long range effect
dc.subject	electromagnetic radiation
dc.subject	electrical conductivity
dc.title	Long range effect in ion-implanted GaAs	en
heal.type	journalArticle
heal.classification	Φυσική
heal.classification	Τεχνολογία
heal.classification	Physics
heal.classification	Technology
heal.classificationURI	N/A-Φυσική
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85067801
heal.keywordURI	http://lod.nal.usda.gov/17516
heal.keywordURI	http://lod.nal.usda.gov/28491
heal.contributorName	Galkin, G.N.	en
heal.contributorName	Chukichev, M.V.	en
heal.contributorName	Resvanov, R.R.	en
heal.contributorName	Ευθυμίου, Π.Κ.	el
heal.contributorName	Μπεκρής, Περικλής Δ.	el
heal.contributorName	Sokolov, S. Yu.	en
heal.contributorName	Kuzemchenko, T.A.	en
heal.contributorName	Khavroshin, D.L.	en
heal.contributorName	Kiv, A.E.	en
heal.identifier.secondary	DOI: 10.1080/10420159308220210
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1993
heal.bibliographicCitation	Aleshchenkoa, Y.A., Bobrovaa, E.A., Vavilova, V.S., Vodopyanova, L.K., Galkina, G.N. et al. (1993) Long range effect in ion-implanted GaAs. Radiation Effects and Defects in Solids. [Online] 125 (4), pp.323-331. Available from: http://www.tandfonline.com [Accessed 05/05/2015]	en
heal.abstract	New experimental data are presented which indicate the change of defect centers concentration in GaAs at macroscopic (up to millimeters) distances from the implanted regions edge. These data were obtained by locally exited cathodoluminescence, by observation of photoconductivity detected locally by contactless MW technique, by conductivity, DLTS and Raman spectroscopy measurement. Interpretation of the mechanism of long range effect is presented.	en
heal.publisher	Taylor & Francis	en
heal.journalName	Radiation Effects and Defects in Solids	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true