Effect of α-particle irradiation on GaAs planar photoconductive detectors at low temperatures

dc.contributor.author	Ευθυμίου, Π.Κ.	el
dc.contributor.author	Ζάρδας, Γεώργιος	el
dc.contributor.author	Συμεωνίδης, Χρυσολέων	el
dc.contributor.author	Banbury, P.C.	en
dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.date.accessioned	2015-05-05T20:36:46Z
dc.date.available	2015-05-05T20:36:46Z
dc.date.issued	2015-05-05
dc.identifier.uri	http://hdl.handle.net/11400/9775
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://onlinelibrary.wiley.com/doi/10.1002/pssa.2211390236/abstract	en
dc.subject	ακτινοβολία
dc.subject	κινητικότητα
dc.subject	θερμοκρασία
dc.subject	ανιχνευτές
dc.subject	Φωτοαγωγιμότητα
dc.subject	Irradiation
dc.subject	Drift mobility
dc.subject	temperature
dc.subject	Detectors
dc.subject	Photoconductive
dc.title	Effect of α-particle irradiation on GaAs planar photoconductive detectors at low temperatures	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85068277
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85039539
heal.identifier.secondary	DOI: 10.1002/pssa.2211390236
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1993-10
heal.bibliographicCitation	Euthymiou, P.C., Zardas, G.E., Symeonidis, C., Banbury, P.C. and Kourkoutas, C.D. (1993) Effect of α-particle irradiation on GaAs planar photoconductive detectors at low temperatures. Physica Status Solidi (a). [Online] 139 (2), pp.K113-K116. Available from: http://onlinelibrary.wiley.com [Accessed 05/05/2015]	en
heal.abstract	Introduction GaAs and structures made of it are widely used at present. However, in spite of considerable effort made to understand the nature, stability, and energy spectrum of local centres introduced into them by high energy particles, there still remains a field of accumulation of significant facts and of much discussion [l, 21. It is well known at present that the complicated processes due to the interaction of point defects, newly introduced by particle irradiation can result in various changes of the energy spectrum which are observed experimentally. a-particle irradiation constitutes a simple method of defect introduction, permitting to estimate both the fluence and the range within which the primary defects are generated. Experimental techniques Three GaAs specimens No. 1, No. 2, and No. 3 of concentration n = (2.8 to 2.4) x 10L6/cm3an d 0.5 mm thickness were used. Two semicircular gold contacts at a distance of 100 pm were formed on the illuminated surface. The other experimental techniques were the same as in [3]. The total dose of a-particles from a 0.6 mCi source was 4.75 x and 8.11 x 1OI2 particles/cm2 for specimens No. 1, No. 2, and No. 3, respectively. The range of the 2.84 MeV a-particles in the direction vertical to the surface was found equal to 6.4 pm. Specimen No. 1 was irradiated at 300 K, while the other two were irradiated at 200 K. 7.28 x Results and discussion In Fig. 1 we plotted the photocurrent spectra for one ofthe specimens (No. 1) before irradiation at various temperatures. They show a main peak at a wavelength corresponding to the energy gap and a very small, not well resolved, peak at photon energies smaller than E,. This peak appears very clearly in Fig. 2c. As the temperature decreases, the photocurrent I,, at this peak also decreases. The dark current I,, negligible at temperatures T < 300 K, increases rapidly with T reaching the value I = 320 nA at T = 350 K. The same spectra are observed for the other specimens. In Fig. 2 the photocurrent spectra at two temperatures (300 and 200 K) before (I,) and after (I,) irradiation for specimens No. 1, No. 2, and No. 3, respectively, are plotted. It is clear that after irradiation the shape of the I,, curve remains the same but I,, increases in contrast to the case of AlGaAs/GaAs irradiated with electrons [3].	en
heal.journalName	Physica Status Solidi (a)	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true