A study of the profile of the E3 electron trap in GaAs

dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Kovacs, B.	en
dc.contributor.author	Ευθυμίου, Π.Κ.	el
dc.contributor.author	Szentpali, B.	en
dc.contributor.author	Somogyi, K.	en
dc.date.accessioned	2015-05-05T20:56:32Z
dc.date.available	2015-05-05T20:56:32Z
dc.date.issued	2015-05-05
dc.identifier.uri	http://hdl.handle.net/11400/9777
dc.rights	An error occurred on the license name.	*
dc.rights.uri	An error occurred getting the license - uri.	*
dc.source	http://www.sciencedirect.com/science/article/pii/0038109894904154	en
dc.subject	Ηλεκτρονική παγίδα
dc.subject	θερμοκρασία
dc.subject	ανάστροφη τάσης πόλωσης
dc.subject	ηλεκτρονική κατάσταση
dc.subject	Electron Trap
dc.subject	temperature
dc.subject	reverse bias voltage
dc.subject	electronic state
dc.title	A study of the profile of the E3 electron trap in GaAs	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.contributorName	Γιακουμάκης, Εμμανουήλ	el
heal.identifier.secondary	DOI: 10.1016/0038-1098(94)90415-4
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1994-01
heal.bibliographicCitation	Kourkoutas, C.D., Kovacs, B., Euthymiou, P.C., Szentpali, B., Somogyi, K. et al. (1994) A study of the profile of the E3 electron trap in GaAs. Solid State Communications. [Online] 89 (1), pp.45-49. Available from: http://www.sciencedirect.com [Accessed 05/05/2015]	en
heal.abstract	Electron irradiation at room temperature introduces in GaAs a donor type electronic state Tx at 0.18 eV, which is associated with the E3 electron trap. The presence of Tx is observed at depths d > 1.5 microm, which correspond to the limits of the depletion region under the highest applied reverse bias voltage, while the E3 trap concentration drops off into the same region.	en
heal.publisher	Elsevier	en
heal.journalName	Solid State Communications	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true