dc.contributor.author | Κουρκουτάς, Κωνσταντίνος Δ. | el |
dc.contributor.author | Παπαϊωάννου, Γεώργιος | el |
dc.date.accessioned | 2015-05-05T21:19:01Z | |
dc.date.available | 2015-05-05T21:19:01Z | |
dc.date.issued | 2015-05-06 | |
dc.identifier.uri | http://hdl.handle.net/11400/9779 | |
dc.rights | An error occurred on the license name. | * |
dc.rights.uri | An error occurred getting the license - uri. | * |
dc.source | http://www.sciencedirect.com/science/article/pii/0038110194900906 | en |
dc.subject | Λύση της εξίσωσης | |
dc.subject | σύγκλιση | |
dc.subject | συντελεστής διόρθωσης | |
dc.subject | κατάλληλο βάρος | |
dc.subject | Poisson's equation | |
dc.subject | Convergence | |
dc.subject | correction factor | |
dc.subject | appropriate weight | |
dc.title | A fast solution of poisson's equation in FETs | en |
heal.type | journalArticle | |
heal.classification | Φυσική | |
heal.classification | Ηλεκτρονική | |
heal.classification | Physics | |
heal.classification | Electronics | |
heal.classificationURI | **N/A**-Φυσική | |
heal.classificationURI | **N/A**-Ηλεκτρονική | |
heal.classificationURI | http://skos.um.es/unescothes/C02994 | |
heal.classificationURI | http://zbw.eu/stw/descriptor/10455-2 | |
heal.keywordURI | http://id.loc.gov/authorities/subjects/sh85103960 | |
heal.keywordURI | http://id.loc.gov/authorities/subjects/sh85031692 | |
heal.identifier.secondary | DOI: 10.1016/0038-1101(94)90090-6 | |
heal.language | en | |
heal.access | campus | |
heal.recordProvider | Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε | el |
heal.publicationDate | 1994-02 | |
heal.bibliographicCitation | Kourkoutas, C.D. and Papaioannou, G.J. (1994) A fast solution of poisson's equation in FETs. Solid State Electronics. [Online] 37 (2), pp.373-376. Available from: http://www.sciencedirect.com [Accessed 05/05/2015] | en |
heal.abstract | In the present work we propose a fast solution of the Poisson's equation in FETs. The method is valid, if the deep centers are uniformly distributed within 1 μm below the interface between the active layer and the substrate. The implicit method is convenient for the solution of the differential equation. The convergence to the final solution is accelerated significantly if the correction factor of the iterative procedure is considered with appropriate weight. | en |
heal.publisher | Elsevier | en |
heal.journalName | Solid State Electronics | en |
heal.journalType | peer-reviewed | |
heal.fullTextAvailability | true |
Οι παρακάτω άδειες σχετίζονται με αυτό το τεκμήριο: