A review article on the transport properties in fatfets upon irradiation

dc.contributor.author	Ευθυμίου, Π.Κ.	el
dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Szentpali, B.	en
dc.contributor.author	Kovacs, B.	en
dc.contributor.author	Somogyi, K.	en
dc.date.accessioned	2015-05-05T21:39:49Z
dc.date.available	2015-05-05T21:39:49Z
dc.date.issued	2015-05-06
dc.identifier.uri	http://hdl.handle.net/11400/9780
dc.rights	An error occurred on the license name.	*
dc.rights.uri	An error occurred getting the license - uri.	*
dc.source	http://link.springer.com/article/10.1007%2FBF03055233	en
dc.subject	ακτινοβολία
dc.subject	κριτική
dc.subject	παράμετροι των μεταφορών
dc.subject	κινητικότητα
dc.subject	θερμοκρασία
dc.subject	μηχανισμών σκέδασης
dc.subject	Irradiation
dc.subject	review
dc.subject	transport parameters
dc.subject	Drift mobility
dc.subject	temperature
dc.subject	scattering mechanisms
dc.title	A review article on the transport properties in fatfets upon irradiation	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85068277
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85039539
heal.contributorName	Banbury, P.C.	en
heal.contributorName	Ζάρδας, Γεώργιος	el
heal.contributorName	Γιακουμάκης, Εμμανουήλ	el
heal.identifier.secondary	DOI: 10.1007/BF03055233
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1994-03
heal.bibliographicCitation	Euthymiou, P.C., Kourkoutas, C.D., Szentpali, B., Kovacs, B., Somogyi, K. et al. (1994) A review article on the transport properties in fatfets upon irradiation. Acta Physica Hungarica. [Online] 74 (1-2), pp.7-19. Available from: http://link.springer.com Accessed 05/05/2015]	en
heal.abstract	We investigated the effect of 0.65 MeV electron irradiation on the transport parameters of GaAs FATFETs with an S-doped active channel of thickness 0.2 μm to 5 μm. We measured mainly the drift mobility and carrier concentration profile at severall temperatures from 170 K to 300 K before and after irradiation. A decrease of the mobility is observed of the mobility profiles as a function of temperature by introduction of different scattering mechanisms gives the scattering parameters and particularly the scattering rate by ionized impurities and space charge before and after irradiation. DLTS and DLOES measurements indicated three electron traps and four hole traps. The results show that the two main electron traps E2 and E3 are affected by an intermediate donor type electronic stateT x The nature ofTx is not known, except that it behaves like a donor.	en
heal.journalName	Acta Physica Hungarica	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true