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dc.contributor.author Ευθυμίου, Π.Κ. el
dc.contributor.author Κουρκουτάς, Κωνσταντίνος Δ. el
dc.contributor.author Szentpali, B. en
dc.contributor.author Kovacs, B. en
dc.contributor.author Somogyi, K. en
dc.date.accessioned 2015-05-05T21:39:49Z
dc.date.available 2015-05-05T21:39:49Z
dc.date.issued 2015-05-06
dc.identifier.uri http://hdl.handle.net/11400/9780
dc.rights An error occurred on the license name. *
dc.rights.uri An error occurred getting the license - uri. *
dc.source http://link.springer.com/article/10.1007%2FBF03055233 en
dc.subject ακτινοβολία
dc.subject κριτική
dc.subject παράμετροι των μεταφορών
dc.subject κινητικότητα
dc.subject θερμοκρασία
dc.subject μηχανισμών σκέδασης
dc.subject Irradiation
dc.subject review
dc.subject transport parameters
dc.subject Drift mobility
dc.subject temperature
dc.subject scattering mechanisms
dc.title A review article on the transport properties in fatfets upon irradiation en
heal.type journalArticle
heal.classification Science
heal.classification Physics
heal.classification Επιστήμες
heal.classification Φυσική
heal.classificationURI http://skos.um.es/unescothes/C03532
heal.classificationURI http://skos.um.es/unescothes/C02994
heal.classificationURI **N/A**-Επιστήμες
heal.classificationURI **N/A**-Φυσική
heal.keywordURI http://id.loc.gov/authorities/subjects/sh85068277
heal.keywordURI http://id.loc.gov/authorities/subjects/sh85039539
heal.contributorName Banbury, P.C. en
heal.contributorName Ζάρδας, Γεώργιος el
heal.contributorName Γιακουμάκης, Εμμανουήλ el
heal.identifier.secondary DOI: 10.1007/BF03055233
heal.language en
heal.access campus
heal.recordProvider Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε el
heal.publicationDate 1994-03
heal.bibliographicCitation Euthymiou, P.C., Kourkoutas, C.D., Szentpali, B., Kovacs, B., Somogyi, K. et al. (1994) A review article on the transport properties in fatfets upon irradiation. Acta Physica Hungarica. [Online] 74 (1-2), pp.7-19. Available from: http://link.springer.com Accessed 05/05/2015] en
heal.abstract We investigated the effect of 0.65 MeV electron irradiation on the transport parameters of GaAs FATFETs with an S-doped active channel of thickness 0.2 μm to 5 μm. We measured mainly the drift mobility and carrier concentration profile at severall temperatures from 170 K to 300 K before and after irradiation. A decrease of the mobility is observed of the mobility profiles as a function of temperature by introduction of different scattering mechanisms gives the scattering parameters and particularly the scattering rate by ionized impurities and space charge before and after irradiation. DLTS and DLOES measurements indicated three electron traps and four hole traps. The results show that the two main electron traps E2 and E3 are affected by an intermediate donor type electronic stateT x The nature ofTx is not known, except that it behaves like a donor. en
heal.journalName Acta Physica Hungarica en
heal.journalType peer-reviewed
heal.fullTextAvailability true


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