Resist plasma etching for 157 nm lithography

dc.contributor.author	Eon, David	en
dc.contributor.author	Cartry, Gilles	en
dc.contributor.author	Peignon, Marie Claude	fr
dc.contributor.author	Cardinaud, Christophe	en
dc.contributor.author	Τσερέπη, Αγγελική Δ.	el
dc.date.accessioned	2015-05-19T07:12:39Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10722
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://ieeexplore.ieee.org/	en
dc.subject	Absorption
dc.subject	Ellipsometry
dc.subject	Lithography
dc.subject	Organic polymers
dc.subject	X-ray photoelectron spectroscopy
dc.subject	Απορρόφηση
dc.subject	Ελλειψομετρία
dc.subject	Λιθογραφία
dc.subject	Οργανικά πολυμερή
dc.subject	Φασματοσκοπία φωτοηλεκτρονίων ακτίνων Χ
dc.title	Resist plasma etching for 157 nm lithography	en
heal.type	conferenceItem
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85042606
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh2005020036
heal.contributorName	Κορδογιάννης, Γεώργιος	el
heal.contributorName	Βαλαμόντες, Ευάγγελος Σ.	el
heal.contributorName	Ράπτης, Ιωάννης Α.	el
heal.contributorName	Γογγολίδης, Ευάγγελος	el
heal.identifier.secondary	DOI: 10.1109/PLASMA.2002.1030463
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2002
heal.bibliographicCitation	Eon, D., Cartry, G., Peignon, M.-C., Cardinaud, C., Tserepi, A.D., et al. (2002) Resist plasma etching for 157 nm lithography, In: Proceedings of the 2002 IEEE International Conference on plasma Science. Banff, Alberta, Canada. 26-30 May, 2002. [online]. p. 217. http://ieeexplore.ieee.org/	en
heal.abstract	International effort are presently being conducted to develop the 157 nm lithography, which is expected to be the next generation optical lithography, allowing to meet the 70 nm node and possibly go beyond. However, resist absorbance is a major problem at 157 nm where "usual" carbon containing resists with too high absorbance at this wavelength. A possible way to face this problem is to use silicon containing resists, which present a suitable absorbance at 157 nm.	en
heal.publisher	IEEE	en
heal.fullTextAvailability	false
heal.conferenceName	2002 IEEE International Conference on plasma Science	en
heal.conferenceItemType	poster