Back-scattering and x-ray-induced correction factors for AES of thin overlayers

dc.contributor.author	Βαλαμόντες, Ευάγγελος Σ.	el
dc.contributor.author	Νασιοπούλου, Ανδρούλα Γ.	el
dc.contributor.author	Γλέζος, Νίκος Μ.	el
dc.date.accessioned	2015-05-19T10:11:02Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10733
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://eu.wiley.com/	en
dc.subject	Monte Carlo Methods
dc.subject	Spectroscopy
dc.subject	Auger electrons
dc.subject	Monte Carlo μέθοδοι
dc.subject	Φασματοσκοπία
dc.subject	Ηλεκτρόνια Auger
dc.title	Back-scattering and x-ray-induced correction factors for AES of thin overlayers	en
heal.type	journalArticle
heal.secondaryTitle	influence on lateral resolution	en
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.identifier.secondary	DOI: 10.1002/sia.740160140
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	campus
heal.publicationDate	1990-07
heal.bibliographicCitation	VALAMONTES, E.S., NASSIOPOULOU, A.G. & GLEZOS, N.M. (1990). Back-scattering and x-ray-induced correction factors for AES of thin overlayers: influence on lateral resolution. Surface and Interface Analysis. [online] 16 (1-12). p. 203-208. Available from: http://eu.wiley.com/	en
heal.abstract	Some results on Monte-Carlo calculations of back-scattering and x-ray-induced correction factors for AES on thin overlayers have been given in a previous paper. In this work, further results are given concerning both correction factors and the lateral resolution in the primary beam energy range 5-60 keV. The x-ray-induced correction factors include both characteristic and continuous x-rays created in the bulk by the primary electrons beam or by back-scattered electrons that contribute to the creation of Auger electrons within the film on their way out of the sample. The contribution of continuous x-rays, negligible at low primary beam energies, is found to be important at energies of >20 keV. The influence of back-scattering on the lateral resolution in the primary beam energy range 20-60 keV has also been studied.	en
heal.publisher	Wiley	en
heal.journalName	Surface and Interface Analysis	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false