dc.contributor.author | Leunissen, L. H. A. | el |
dc.contributor.author | Ercken, Monique | el |
dc.contributor.author | Πάτσης, Γεώργιος | el |
dc.date.accessioned | 2015-05-19T14:39:54Z | |
dc.date.available | 2015-05-19T14:39:54Z | |
dc.date.issued | 2015-05-19 | |
dc.identifier.uri | http://hdl.handle.net/11400/10736 | |
dc.rights | Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.source | http://www.sciencedirect.com | en |
dc.source | http://www.sciencedirect.com/science/article/pii/S0167931704005398 | en |
dc.subject | LER | |
dc.subject | Στατιστικές διακυμάνσεις | |
dc.subject | Electron beam lithography | |
dc.subject | Λιθογραφία δέσμης ηλεκτρονίων | |
dc.title | Determining the impact of statistical fluctuations on resist line edge roughness | en |
heal.type | journalArticle | |
heal.classification | Technology | |
heal.classification | Electronics | |
heal.classification | Τεχνολογία | |
heal.classification | Ηλεκτρονική | |
heal.classificationURI | http://id.loc.gov/authorities/subjects/sh85133147 | |
heal.classificationURI | http://id.loc.gov/authorities/subjects/sh85042383 | |
heal.classificationURI | **N/A**-Τεχνολογία | |
heal.classificationURI | **N/A**-Ηλεκτρονική | |
heal.identifier.secondary | DOI: 10.1016/j.mee.2004.12.005 | |
heal.language | en | |
heal.access | campus | |
heal.publicationDate | 2005-03 | |
heal.bibliographicCitation | Leunissen, L.H.A., Ercken, M. and Patsis, G. (2005) Determining the impact of statistical fluctuations on resist line edge roughness. "Microelectronic Engineering", 78-79, p.2–10 | en |
heal.abstract | Line edge roughness of chemically amplified resists depends on many parameters. In a practical situation, all settings are chosen to be at their optimum, giving the smallest LER. Starting from this situation, the trade-off between four important parameters (shot noise, secondary electron drift, resist polymer size and post-exposure bake diffusion), is investigated in this paper. | en |
heal.publisher | Elsevier | en |
heal.journalName | Microelectronic Engineering | en |
heal.journalType | peer-reviewed | |
heal.fullTextAvailability | false |
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