Broadband electrical characterization of macroporous silicon at microwave frequencies

dc.contributor.author	Κοντοπανάγος, Χαράλαμπος Φ.	el
dc.contributor.author	Παγώνης, Δημήτριος-Νικόλαος	el
dc.contributor.author	Νασσιοπούλου, Ανδρούλα Γ.	el
dc.date.accessioned	2015-06-03T15:04:21Z
dc.date.available	2015-06-03T15:04:21Z
dc.date.issued	2015-06-03
dc.identifier.uri	http://hdl.handle.net/11400/14944
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.scopus.com/record/display.url?origin=recordpage&eid=2-s2.0-55849125394&citeCnt=3&noHighlight=false&sort=plf-f&src=s&sid=13163B668AF7FCBFE1B88E8B657F8A6C.53bsOu7mi7A1NSY7fPJf1g%3a4500&sot=autdocs&sdt=autdocs&sl=17&s=AU-ID%286602623949%29&relpos=7	en
dc.subject	ανοδίωση
dc.subject	Μέσες διαμέτρους
dc.subject	Συγκρότημα διηλεκτρικές
dc.subject	Κυλινδρικοί πόροι
dc.subject	άμεσες μετρήσεις
dc.subject	Anodization
dc.subject	Average diameters
dc.subject	Complex permittivities
dc.subject	Cylindrical Pores
dc.subject	Direct measurements
dc.title	Broadband electrical characterization of macroporous silicon at microwave frequencies	en
heal.type	journalArticle
heal.classification	Μηχανική
heal.classification	Ηλεκτρολογική μηχανική
heal.classification	Engineering
heal.classification	Electrical engineering
heal.classificationURI	N/A-Μηχανική
heal.classificationURI	N/A-Ηλεκτρολογική μηχανική
heal.classificationURI	http://skos.um.es/unescothes/C01363
heal.classificationURI	http://skos.um.es/unescothes/C01311
heal.identifier.secondary	DOI: 10.1002/pssa.200780105
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Ναυπηγών Μηχανικών Τ.Ε.	el
heal.publicationDate	2008-11
heal.bibliographicCitation	Contopanagos, H., Pagonis, D.N. and Nassiopoulou, A.G. (2008) Broadband electrical characterization of macroporous silicon at microwave frequencies. Physica Status Solidi (A) Applications and Materials Science. [Online] 205, pp.2548-2551. Available from: http://www.scopus.com [Accessed 03/06/2015]	en
heal.abstract	Macroporous silicon layers with randomly distributed vertical cylindrical pores of average diameter 120 nm were fabricated on selected areas on a p + (resistivity 5 mΩcm) silicon substrate by anodization in HF xethanol solution. The thickness of the layers was 50 μm and they are intended for use as RF isolation micro-plates for on-chip passive devices operated at microwave frequencies. In this respect, we present in this work results of their electrical characterization in the 40 MHz-7 GHz frequency range using a macroscopic platform, where the die containing the porous silicon layer on the highly doped Si substrate is inserted directly underneath a microstrip line. The highly doped Si substrate used acts as a lossy metal ground for the microstrip. We measured and simulated the scattering parameters of the system using a finite-element full-wave electromagnetic solver. We have chosen a broad frequency band extending from 40 MHz up to 7 GHz, beyond the first harmonic of the transmission line. By identifying measured and simulated S-parameters over the whole frequency band we extract both geometrical characteristics of the measurement set-up not accessible to direct measurements and the complex permittivity of porous silicon.	en
heal.journalName	Physica Status Solidi (A) Applications and Materials Science	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true