Probing the electrical properties of the si nitride/si interface

dc.contributor.author	Τσώνος, Χρήστος	el
dc.contributor.author	Καναπίτσας, Αθανάσιος	el
dc.contributor.author	Καραγκούνης, Α.	el
dc.contributor.author	Σταύρακας, Ηλίας	el
dc.contributor.author	Τριάντης, Δήμος Α.	el
dc.date.accessioned	2015-04-19T11:07:53Z
dc.date.available	2015-04-19T11:07:53Z
dc.date.issued	2015-04-19
dc.identifier.uri	http://hdl.handle.net/11400/8548
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://ieeexplore.ieee.org/	en
dc.subject	MIS structures
dc.subject	Aluminum
dc.subject	capacitance
dc.subject	capacitance measurement
dc.subject	Dielectric relaxation
dc.subject	electrical conductivity
dc.subject	electrochemical impedance spectroscopy
dc.subject	elemental semiconductors
dc.subject	interface structure
dc.subject	inversion layers
dc.subject	ohmic contacts
dc.subject	silicon
dc.subject	Silicon compounds
dc.subject	ηλεκτρική αγωγιμότητα
dc.subject	MIS δομές
dc.subject	αλουμίνιο
dc.subject	χωρητικότητα
dc.subject	μέτρηση της χωρητικότητας
dc.subject	διηλεκτρική χαλάρωση
dc.subject	ηλεκτροχημική αντίσταση φασματοσκοπίας
dc.subject	στοιχειακοί ημιαγωγοί
dc.subject	διάρθρωση της διεπαφής
dc.subject	στρώματα αναστροφής
dc.subject	ωμικές επαφές
dc.subject	σιλικόνη
dc.subject	Ενώσεις σιλικόνης
dc.title	Probing the electrical properties of the si nitride/si interface	en
heal.type	conferenceItem
heal.classification	Science
heal.classification	Physics
heal.classification	Electronics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classification	Ηλεκτρονική
heal.classificationURI	http://zbw.eu/stw/descriptor/15685-2
heal.classificationURI	http://zbw.eu/stw/descriptor/15669-0
heal.classificationURI	http://zbw.eu/stw/descriptor/10455-2
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.classificationURI	N/A-Ηλεκτρονική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85003956
heal.keywordURI	http://lod.nal.usda.gov/21954
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85037787
heal.keywordURI	http://lod.nal.usda.gov/28491
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85122521
heal.contributorName	Αναστασιάδης, Κίμων	el
heal.contributorName	Φωτόπουλος, Παναγιώτης	el
heal.contributorName	Βαμβακάς, Β.Ε.	el
heal.contributorName	Πίσσης, Πολύκαρπος	el
heal.identifier.secondary	DOI: 10.1109/MIEL.2010.5490441
heal.language	en
heal.access	free
heal.publicationDate	2010-05
heal.bibliographicCitation	Tsonos, C., Kanapitsas, A., Karagounis, A., Stavrakas, I., Triantis, D.A., et al. (2010) Probing the electrical properties of the si nitride/si interface, In: Proceedings of the 27th International Conference on Microelectronics. Niš, Serbia, 16-19 May, 2010. [online]. p.465-468. Available from: http://ieeexplore.ieee.org/	en
heal.abstract	The present publication employs Dielectric Relaxation Spectroscopy for the examination of the relaxation mechanisms in silicon nitride MIS structures. These results are combined with capacitance and conductance measurements in order to give a more complete picture of the dielectric behaviour of silicon nitride. The analysis concludes with a method based on Dielectric Relaxation Spectroscopy for the calculation of the depletion layer width.	en
heal.publisher	IEEE	en
heal.fullTextAvailability	true
heal.conferenceName	27th International Conference on Microelectronics (MIEL 2010)	en
heal.conferenceItemType	full paper