DLTS studies of defects in GaP:Te before and after electron irradiation

dc.contributor.author	Banbury, P.C.	en
dc.contributor.author	Ευθυμίου, Π.Κ.	el
dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Ζάρδας, Γεώργιος	el
dc.date.accessioned	2015-05-04T20:46:55Z
dc.date.available	2015-05-04T20:46:55Z
dc.date.issued	2015-05-04
dc.identifier.uri	http://hdl.handle.net/11400/9705
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com/science/article/pii/003810989090191D	en
dc.subject	Ελαττώματα
dc.subject	Ακτινοβολία
dc.subject	ενεργοποίηση των ηλεκτρονίων
dc.subject	θερμοκρασία
dc.subject	Defects
dc.subject	Irradiation
dc.subject	electron activation
dc.subject	temperature
dc.title	DLTS studies of defects in GaP:Te before and after electron irradiation	en
heal.type	journalArticle
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classification	Science
heal.classification	Physics
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85068277
heal.identifier.secondary	DOI: 10.1016/0038-1098(90)90191-D
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1990-04
heal.bibliographicCitation	Banbury, P.C., Euthymiou, P.C., Kourkoutas, C.D. and Zardas, G.E. (1990) DLTS studies of defects in GaP : Te before and after electron irradiation. Solid State Communications. [Online] 74 (4), pp.305-308. Available from: http://www.sciencedirect.com [Accessed 04/05/2015]	en
heal.abstract	DLTS studies on as grown Czochralski n-type GaP : Te show peaks corresponding to electron activation of 0.205, 0.485, 0.65 and 0.567 eV. After irradiation by 1 MeV electrons at room temperature two new levels are found at 0.248 and 0.329 eV and the peak corresponding to the level 0.567 eV increased in amplitude. The level of 0.49 eV, present in all cases and specimens showed charge dependent bistability. A technique is described by which activation energies were measured for conversion between stable configurations.	en
heal.publisher	Elsevier	en
heal.journalName	Solid State Communications	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true