Correction of the drift mobility measurements in GaAs MESFETS

dc.contributor.author	Κουρκουτάς, Κωνσταντίνος Δ.	el
dc.contributor.author	Ευθυμίου, Π.Κ.	el
dc.contributor.author	Szentpali, B.	en
dc.contributor.author	Kocacs, B.	en
dc.contributor.author	Somogyi, K.	el
dc.date.accessioned	2015-05-04T22:14:31Z
dc.date.available	2015-05-04T22:14:31Z
dc.date.issued	2015-05-05
dc.identifier.uri	http://hdl.handle.net/11400/9709
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com/science/article/pii/0038109891906337	en
dc.subject	Διόρθωση
dc.subject	Κινητικότητα
dc.subject	Μετρήσεις
dc.subject	θερμοκρασία
dc.subject	Editing
dc.subject	Drift mobility
dc.subject	Measurements
dc.subject	temperature
dc.title	Correction of the drift mobility measurements in GaAs MESFETS	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://skos.um.es/unescothes/C03532
heal.classificationURI	http://skos.um.es/unescothes/C02994
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.keywordURI	http://skos.um.es/unescothes/C01191
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85039539
heal.identifier.secondary	DOI: 10.1016/0038-1098(91)90633-7
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Μηχανικών Ενεργειακής Τεχνολογίας Τ.Ε	el
heal.publicationDate	1991-06
heal.bibliographicCitation	Kourkoutas, C.D., Euthymiou, P.C., Szentpali, B., Kocacs, B. and Somogyi, K. (1991) Correction of the drift mobility measurements in GaAs MESFETS. Solid State Communications. [Online] 78 (9), pp.849-852. Available from: http://www.sciencedirect.com [Accessed 04/05/2015]	en
heal.abstract	Drift mobility and electron concentration values in GaAs MESFETs obtained by capacitance-conductance measurements are corrected by means of a self-consistent iterative procedure. The final results are compared with the experimental Hall mobility data for the same wafer. It is found that the agreement is good for temperatures T > 175 K.	en
heal.publisher	Elsevier	en
heal.journalName	Solid State Communications	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true