Dielectric characterization of macroporous thick silicon films in the frequency range 1 Hz–1 MHz

dc.contributor.author	Θεοδωροπούλου, Μ.	el
dc.contributor.author	Παγώνης, Δημήτριος-Νικόλαος	el
dc.contributor.author	Νασσιοπούλου, Ανδρούλα Γ.	el
dc.contributor.author	Krontiras, C. A.	en
dc.contributor.author	Georga, S. N.	en
dc.date.accessioned	2014-09-23T16:33:03Z
dc.date.available	2014-09-23T16:33:03Z
dc.date.issued	2014-09-23
dc.identifier.uri	http://hdl.handle.net/11400/2697
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en
dc.title	Dielectric characterization of macroporous thick silicon films in the frequency range 1 Hz–1 MHz	en
heal.type	journalArticle
heal.classification	Naval science (General)
heal.classificationURI	N/A-Naval science (General)
heal.identifier.secondary	10.1002/pssc.200780153
heal.language	en
heal.access	free
heal.recordProvider	ΤΕΙ Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Ναυπηγών Μηχανικών Τ.Ε.	el
heal.publicationDate	2008-09-16
heal.bibliographicCitation	Theodoropoulou, M., Pagonis, D. N., Nassiopoulou, A. G., Krontiras, C. A. and Georga, S. N.. (2008). Dielectric characterization of macroporous thick silicon films in the frequency range 1 Hz–1 MHz. Phys. Status Solidi C. Vol 5 (Issue 12 ), 3597–3600.	en
heal.abstract	Macroporous silicon was fabricated on selected areas on p+ silicon substrate by anodization in HF x Ethanol solution. Pore size was ~ 130 nm. By high temperature thermal oxida-tion, a thin SiO2 layer was formed on pore walls. MOS ca-pacitors with Al metallization were then fabricated and the samples were characterized by dielectric spectroscopy (DS) in the frequency range 1 Hz–1 MHz and in the temperature range 173–353 K. The results reveal that at low temperatures the dielectric constant ε΄ is independent of frequency (tox = 20 nm ε΄~3.4, tox = 40 nm ε΄ ~ 2.8, tox = 72 nm ε΄ ~ 2.6). A theo-retical model, based on Vegard’s law, which calculates the static dielectric constant of the samples, was used. The calcu-lated theoretical values are in good agreement with the experimental results. Dielectric loss data show that the oxidized samples exhibit values of tanδ < 10–2 which are smaller than those of the non oxidized samples. The obtained dielectric characteristics enable oxidized macroporous silicon thick layers to be good candidates for use in RF isolation on a silicon substrate. Transient current measurements were also performed at room temperature for voltages from 1.0 to 20.0 V in the time interval 1-100s in accumulation. The analysis of the experimental data reveals that the conductivity is gov-erned by two different conduction mechanisms. In the low applied voltage region the conduction is due to thermally ex-cited electrons, hopping from one state to another. For higher voltages Fowler-Nordheim (F-N) tunnelling of electrons through the oxide prevails.	en
heal.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en
heal.journalName	Phys. Status Solidi C	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true